Hot Trap By-Product Removal in Semiconductor Deposition

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

The accumulation of by-products in semiconductor processing apparatus components leads to equipment failure and costly downtime, as existing solutions like fore-line traps and fluorine-based approaches are inefficient or impractical, especially in Atomic Layer Deposition (ALD) systems where high by-product volumes and hydrogen presence complicate the removal process.

Innovation Solution

Implementing a series of hot traps with multiple configurations, including parallel and series arrangements, and integrating a fluorine source to maintain fluorine radicals for continuous operation and efficient by-product removal, achieving over 99% trapping efficiency and enabling in-situ cleaning of traps without system shutdown.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a fore-line trap is used to trap by-products, then pump seizure and failure are prevented, but the trap becomes clogged and requires frequent cleaning or replacement

Engineering Contradiction:
Improvepump reliabilityVSAvoiddowntime for cleaning
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The trap performs self-cleaning by reacting accumulated by-products with fluorine radicals generated in-situ, eliminating the need for external cleaning operations and maintaining continuous operation without downtime

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The trap temperature is elevated to approximately 200°C to enable the chemical reaction between by-products and fluorine radicals, transforming the trap from a passive collection device to an active self-cleaning system

Inventive Principle:
Principle #35Parameter changes

2Object-generated harmful factors

If fluorine is introduced to react with by-products in the foreline, then non-chamber deposition is reduced, but hydrogen present in the process reacts preferentially with fluorine

Engineering Contradiction:
Improvenon-chamber depositionVSAvoidfluorine consumption
Core Design Contradiction:
Object-generated harmful factorsVSQuantity of substance

Solution Approach 1:

Hydrogen is removed from the gas stream before fluorine is introduced to the trap, preventing preferential reaction and ensuring fluorine is available to react with by-products that cause non-chamber deposition

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

Hydrogen is extracted or removed from the process gas stream prior to fluorine introduction, isolating the hydrogen-fluorine reaction from the by-product treatment process

Inventive Principle:
Principle #2Taking out (Extraction)

3Manufacturing precision

If sequential alternating pulses of precursors and purge gases are used in ALD, then uniform thin layer deposition is achieved, but by-products accumulate in apparatus components

Engineering Contradiction:
Improvefilm uniformityVSAvoidby-product accumulation
Core Design Contradiction:
Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

The by-products that accumulate in the foreline trap are converted into a removable form through reaction with fluorine radicals, transforming the harmful accumulation into a self-cleaning process that maintains system performance

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

Fluorine radicals act as an intermediary substance that reacts with by-products in the trap, facilitating their removal without interfering with the main ALD deposition process in the reaction chamber

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution significantly reduces by-product accumulation, preventing pump seizure and system clogging, allowing for continuous operation and substantial cost savings by maintaining high trapping efficiency and facilitating easy trap cleaning, even in high by-product environments like ALD systems.

Implementation Method 1

a first precursor, typically a metal bonded to an atomic or molecular ligand to make a volatile molecule, that reacts with the substrate

Methodology Applied
Scientific EffectAdsorption: Adsorption

Implementation Method 2

The net reaction must deposit the pure desired film and eliminate the 'extra' atoms that compose the molecular precursors

Methodology Applied
Scientific EffectChemical reaction: Chemical Bonding

Implementation Method 3

integrating a fluorine source to maintain fluorine radicals for continuous operation and efficient by-product removal

Methodology Applied
Scientific EffectRadical reaction: Chemical Bonding

Implementation Method 4

Implementing a series of hot traps with multiple configurations

Methodology Applied
Scientific EffectThermal decomposition: Pyrolysis

Data Source

PatentEP1889286B1High efficiency trapping method for deposition process
Publication Date: 2018.03.28 EDWARDS VACUUM LLC
  • EP1889286B1 patent drawingFigure 1
  • EP1889286B1 patent drawingFigure 2
  • EP1889286B1 patent drawingFigure 3

AI summary

The present invention provides a system, apparatus and method for improving the efficiency of a semiconductor processing system, such as a deposition system by decreasing or substantially eliminating the accumulation of by-products in the apparatus components of the semiconductor processing system. The present invention further relates to improving the efficiency of a foreline trap associated with a semiconductor processing system, wherein the trap removes substantially all of the by-products from the exhaust gas from the processing chamber, m addition, the present invention provides a system, apparatus and method for efficiently clearing traps of accumulated by-products from exhaust gas of a semiconductor processing system.