HSIO Package Substrate Edge Structure for Delamination-Free Singulation
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Solution Overview
Problem
High-speed input/output (HSIO) packaging substrates with adhesion layers like SiNx and seed layers such as Ti/Cu face issues of interfacial delamination and residual film stress leading to cracks during singulation, affecting manufacturing reliability.
Innovation Solution
Implementing singulation processes like laser ablation, etching, and mechanical sawing to reduce delamination and core cracking, resulting in novel edge topographies with sloped or inset edges that mitigate these defects, and using core materials like organic or glass with fiber reinforcement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If SiNx adhesion layer is deposited over copper layers using PVD process, then copper smoothness and adhesion to buildup film layers are improved, but interfacial delamination occurs at SiNx-buildup film interface during singulation
Solution Approach 1:
The patent segments the singulation process into two distinct stages: first removing the SiNx adhesion layer and buildup film layers through etching or laser ablation, then subsequently singulating the core substrate. This segmentation prevents delamination by eliminating the problematic interface before cutting occurs.
Solution Approach 2:
The patent performs preliminary removal of the SiNx adhesion layer and buildup film layers before the actual singulation process. This preliminary action eliminates the source of delamination risk, allowing subsequent cutting to proceed without interface failure.
2Strength
If Ti/Cu seed layer is deposited using PVD process, then copper routing smoothness is improved, but residual film stress causes cracks in core substrate during singulation
Solution Approach 1:
The patent extracts and removes the Ti/Cu seed layer from the structure before singulation using etching or laser ablation processes. This extraction eliminates the residual film stress that would otherwise cause cracks in the core substrate during the cutting process.
Solution Approach 2:
The patent performs preliminary removal of the seed layer before singulation to eliminate stress. This preliminary action prevents crack formation by removing the stress source prior to the mechanical loading that occurs during cutting.
3Productivity
If mechanical sawing is used for singulation, then manufacturing efficiency is improved, but delamination and cracking risks increase
Solution Approach 1:
The patent segments the manufacturing process into distinct stages: first removing vulnerable layers (SiNx adhesion layer and buildup film) through chemical or laser processes, then performing mechanical sawing on the exposed core. This segmentation allows high-speed mechanical cutting without the reliability risks that would otherwise accompany it.
Solution Approach 2:
The patent performs preliminary removal of the SiNx adhesion layer and buildup film layers before mechanical singulation. This preliminary action eliminates delamination and cracking risks, enabling subsequent high-speed mechanical sawing to proceed with improved reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively reduces the risk of delamination and core cracking, enabling reliable singulation and improving the manufacturing process for HSIO packaging substrates by creating distinct edge architectures that indicate the methods used to form the package substrates.
Implementation Method 1
Implementing singulation processes like laser ablation
Data Source
AI summary
Embodiments disclosed herein include package substrates and methods of forming such substrates. In an embodiment, a package substrate comprises a core, a first layer over the core, where the first layer comprises a metal, and a second layer over the first layer, where the second layer comprises an electrical insulator. In an embodiment, the package substrate further comprises a third layer over the second layer, where the third layer comprises a dielectric material, and where an edge of the core extends past edges of the first layer, the second layer, and the third layer.