Humid Gas Pre-Treatment in Resist Heat Processing

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Solution Overview

Problem

Existing heat treatment processes for semiconductor wafers with exposed resist films struggle to achieve sufficient insolubilization of the exposed portion in the resist film, leading to narrower than desired resist pattern widths due to insufficient hydrophilization and dehydration condensation.

Innovation Solution

A heat treatment apparatus that includes a stage for heating the substrate, a lifting mechanism to raise and lower the substrate, and a gas supply system to provide a humid gas with higher humidity than the atmosphere, promoting hydrophilization and dehydration condensation of the resist film before and during heating.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional heat treatment is performed without humid gas supply, then the process is simple and fast, but the insolubilization reaction is insufficient leading to narrower resist pattern widths

Engineering Contradiction:
Improveresist pattern widthVSAvoidheat treatment process
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The gas supply unit supplies humid gas to the resist film before heating begins, pre-introducing water molecules that are necessary for the insolubilization reaction. This preliminary action ensures that when heating occurs, the chemical reaction can proceed effectively from the outset, producing sufficient insolubilization and achieving the desired resist pattern width without requiring excessively complex process adjustments

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The invention changes the humidity parameter of the atmosphere during heat treatment by introducing humid gas. This parameter modification creates optimal conditions for the insolubilization reaction, enabling sufficient chemical transformation of the resist film to achieve the required pattern dimensions while maintaining a relatively simple overall process structure

Inventive Principle:
Principle #35Parameter changes

2Reliability

If heating is performed immediately without preliminary humid gas exposure, then the treatment time is shorter, but the hydrophilization and dehydration condensation are insufficient

Engineering Contradiction:
Improveinsolubilization reactionVSAvoidheat treatment time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The system performs preliminary exposure of the resist film to humid gas before the heating phase begins. This pre-treatment introduces the necessary water molecules into the resist structure, enabling the hydrophilization and dehydration condensation reactions to proceed effectively during the subsequent heating phase, thereby ensuring reliable insolubilization without requiring excessive total processing time

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The gas supply and heating operations are coordinated to create a continuous process where humid gas exposure begins before heating and continues through the heat treatment phase. This continuous action ensures that water molecules are consistently available throughout the insolubilization reaction, maintaining reliable chemical transformation while optimizing the overall process duration

Inventive Principle:
Principle #20Continuity of useful action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enhances the insolubilization reaction of the exposed resist portion, ensuring consistent line widths and reliability of resist patterns even with low-output exposure apparatuses like EUV, by uniformly introducing hydroxyl groups into the resist film.

Implementation Method 1

a gas supply configured to supply a first gas to the substrate located at the second position before moving to the first position, the first gas having a humidity higher than that of an atmosphere in which the stage is provided

Methodology Applied
Scientific EffectAbsorption: Absorption (physical)

Implementation Method 2

exhibiting a change in the solubility of an exposed portion or an unexposed portion in a liquid developer by reacting with water and being heated

Methodology Applied
Scientific EffectHydrophilization: Hydrophile

Implementation Method 3

by heat-treating the wafer on which the exposed resist is formed, a chemical reaction of the exposed portion or the unexposed portion of the resist film progresses, making the exposed portion or the unexposed portion soluble or insoluble in a liquid developer

Methodology Applied
Scientific EffectDehydration condensation: Condensation

Data Source

PatentUS12572077B2Heat treatment apparatus and heat treatment method
Publication Date: 2026.03.10 TOKYO ELECTRON LTD
  • US12572077B2 patent drawing
  • US12572077B2 patent drawing
  • US12572077B2 patent drawing

AI summary

Provided is a technique that, when heat-treating a substrate including an exposed resist film formed on a surface of the substrate and exhibiting a change in solubility of an exposed portion or an unexposed portion in a liquid developer by reacting with water and being heated, is capable of promoting the change in the solubility. For this purpose, a heat treatment apparatus includes: a stage 23 on which the substrate W is placed and heated; a lifting mechanism 26 configured to relatively raise and lower the substrate W between a first position at which the substrate is placed on the stage 23 and a second position spaced apart from the stage; and a gas supply 33 configured to supply a first gas having a humidity higher than that of an atmosphere in which the stage 23 is provided, to the substrate W located at the second position before moving to the first position.