High-Voltage Resistant Diode Isolation for Leakage Current

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Conventional high-voltage integrated circuit devices experience leakage currents due to incomplete electrical isolation between high-voltage and low-voltage circuit regions, leading to unstable operation of semiconductor devices.

Innovation Solution

A high-voltage integrated circuit device with a high-voltage resistant diode and additional isolation regions that completely electrically isolate the diode from both the low-voltage and high-voltage circuit regions, preventing leakage currents and maintaining electrical characteristics under 600V.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If a high-voltage resistant diode is formed in the junction termination between high-voltage and low-voltage circuit regions, then current flow between regions is enabled, but leakage currents occur due to incomplete electrical isolation

Engineering Contradiction:

Improvecurrent flow capabilityVSAvoidelectrical isolation

Core Design Contradiction:

Ease of operationVSReliability

Solution Approach 1:

The patent divides the isolation structure into multiple segments: a first isolation region extending from the low-voltage circuit region into the junction termination, and a second isolation region extending from the high-voltage circuit region into the junction termination. These segmented isolation regions work together to completely electrically isolate the high-voltage resistant diode from both circuit regions, preventing leakage currents while maintaining current flow capability through the diode itself.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent introduces isolation regions as intermediary structures between the high-voltage resistant diode and the circuit regions. These isolation regions act as mediators that provide complete electrical isolation, preventing harmful leakage currents from affecting the circuit regions while allowing the diode to perform its intended current flow function.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Ease of manufacture

If conventional isolation structures are used, then manufacturing is simpler, but leakage currents cause unstable operation of semiconductor devices

Engineering Contradiction:

Improveisolation structure fabricationVSAvoiddevice operation stability

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The isolation structure is segmented into a first isolation region formed in the low-voltage circuit region and a second isolation region formed in the high-voltage circuit region. Both regions extend into the junction termination and work together to provide complete electrical isolation. This segmented approach maintains manufacturing simplicity while effectively preventing leakage currents that would cause unstable device operation.

Inventive Principle:

Principle #1Segmentation

3Reliability

If the high-voltage resistant diode is completely electrically isolated using additional isolation regions, then leakage currents are eliminated, but device complexity increases

Engineering Contradiction:

Improveleakage current eliminationVSAvoidisolation region configuration

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent implements complete electrical isolation by segmenting the isolation structure into two distinct regions: a first isolation region in the low-voltage circuit region and a second isolation region in the high-voltage circuit region. Both regions extend into the junction termination to meet and provide complete isolation. While this increases device complexity compared to conventional structures, it successfully eliminates leakage currents and ensures reliable operation.

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively eliminates leakage currents, ensuring stable operation of semiconductor devices and reducing manufacturing costs by simplifying circuit configuration and size.

Implementation Method 1

a first isolation region and a second isolation region electrically isolating the high-voltage resistant diode from the low-voltage circuit region and the high-voltage circuit region

Methodology Applied

Scientific EffectElectrical isolation: Electrical Resistance

Data Source

PatentUS7906828B2High-voltage integrated circuit device including high-voltage resistant diode

Publication Date: 2011.03.15 SEMICON COMPONENTS IND LLC

AI summary

A high-voltage integrated circuit includes a low-voltage circuit region having a plurality of semiconductor devices, which operate with respect to a ground voltage, a high-voltage circuit region having a plurality of semiconductor devices, which operate with respect to a voltage that varies from the ground voltage to a high voltage, a junction termination and a first isolation region electrically isolating the low-voltage circuit region from the high-voltage circuit region, a high-voltage resistant diode formed between the low-voltage circuit region and the high-voltage circuit region, and a second isolation region surrounding the high-voltage resistant diode and electrically isolating the high-voltage resistant diode from the low-voltage circuit region and the high-voltage circuit region.