High Voltage Field Device Conductive Body Insulation
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Solution Overview
Problem
High voltage semiconductor devices face limitations in maximum operating voltage due to the turned on threshold voltage of parasitic field devices, which is often lower than the breakdown voltage, and existing methods to avoid this either increase costs or device area, or require additional thermal budgets.
Innovation Solution
A field device configuration with a substrate, conductive wells, and a conductive body positioned between the conductive line and the well, where the conductive body is insulated from the line, effectively distributing voltage differences to improve the threshold voltage without increasing costs or device area, and optionally applying a fixed voltage bias to the conductive body during high voltage operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If pad is formed within high voltage well to eliminate voltage difference, then parasitic field device is prevented from turning on, but device area increases and HV-well isolation failure risk increases
Solution Approach 1:
The patent introduces a conductive body as an intermediary element positioned between the conductive line and the first well. This conductive body acts as a mediator to distribute voltage differences, preventing the parasitic field device from turning on without requiring a large pad area. The conductive body is insulated from the conductive line and positioned to correspond across the first well region, effectively managing the voltage distribution issue.
2Reliability
If oxide thickness on HV-well is increased to raise channel reverse difficulty, then parasitic field device is prevented from turning on, but manufacturing time increases and thermal budget increases causing heat accumulation
Solution Approach 1:
The conductive body serves as an intermediary structure that distributes voltage differences between the conductive line and the first well. By introducing this intermediate element, the patent avoids the need for thick oxide growth to prevent parasitic field device activation. The conductive body manages the voltage distribution issue directly, eliminating the time-consuming oxide growth process and associated thermal budget concerns.
3Reliability
If conductive body is added between conductive line and well, then threshold voltage is improved without increasing device area, but device complexity increases
Solution Approach 1:
The conductive body is positioned in a specific spatial arrangement between the conductive line and the first well, corresponding across the first well region. By utilizing this dimensional positioning and the insulation relationship, the patent achieves threshold voltage improvement without significantly increasing device area. The conductive body is insulated from the conductive line and positioned to correspond across the first well region, effectively managing voltage distribution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the threshold voltage of the field device, preventing it from turning on during high voltage operations without additional costs or device area, thereby maintaining the maximum operating voltage of the semiconductor device.
Implementation Method 1
a conductive body positioned between the conductive line and the first well, and the conductive body under the conductive line correspondingly across the first well region, wherein the conductive body is insulated from the conductive line
Data Source
AI summary
A field device and method of operating high voltage semiconductor device applied with the same are provided. The field device includes a first well having a second conductive type and second well having a first conductive type both formed in the substrate (having the first conductive type) and extending down from a surface of the substrate, the second well adjacent to one side of the first well and the substrate is at the other side of the first well; a first doping region having the first conductive type and formed in the second well, the first doping region spaced apart from the first well; a conductive line electrically connected to the first doping region and across the first well region; and a conductive body insulatively positioned between the conductive line and the first well, and the conductive body correspondingly across the first well region.