Temperature-Compensated HV Level Shifter for High-Side Gate Drivers
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Solution Overview
Problem
High-voltage level shifters face challenges due to large size and high parasitic gate capacitance, which limit performance and switching speed, and previous solutions like replacing MOSFETs with HEMTs or resistors introduce issues like low mobility, high temperature coefficients, and static current, compromising power efficiency and switching speed.
Innovation Solution
A level shifter design incorporating a transistor, a pull-up resistor, and a pull-down resistor with high temperature coefficients, where both resistors are made of group III-V semiconductor material, allowing for temperature compensation and reduced static current without impacting switching speed, by adjusting the resistance ratio to minimize temperature-induced changes and RC time constant.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If MOSFETs are replaced with HEMTs to reduce parasitic gate capacitance, then switching speed is improved, but mobility decreases and performance is compromised
Solution Approach 1:
The patent changes the material parameter from conventional MOSFET or HEMT to a transistor implemented in group III-V semiconductor technology, which provides both low parasitic gate capacitance for fast switching and high carrier mobility for excellent performance, simultaneously resolving the contradiction between switching speed and device performance
2Area of moving object
If resistors are used to replace MOSFETs to reduce size, then device area is reduced, but temperature coefficients increase and stability deteriorates
Solution Approach 1:
The patent employs group III-V semiconductor material with inherently low temperature coefficients, changing the material parameter to achieve both compact device area and excellent temperature stability, simultaneously resolving the contradiction between miniaturization and thermal stability
3Adaptability or versatility
If conventional level shifter designs are used to achieve voltage translation, then voltage domain conversion is enabled, but static current increases and power efficiency decreases
Solution Approach 1:
The patent changes the transistor implementation to group III-V semiconductor technology with superior electrical characteristics, enabling voltage domain translation while minimizing static current consumption and maximizing power efficiency, simultaneously resolving the contradiction between adaptability and energy efficiency
4Area of moving object
If device size is reduced to improve integration, then area is reduced, but parasitic capacitance increases and switching speed decreases
Solution Approach 1:
The patent changes to group III-V semiconductor material which enables further miniaturization with lower parasitic capacitance per unit area, allowing both reduced device area and maintained or improved switching speed, simultaneously resolving the contradiction between integration density and switching performance
Data Source
AI summary
Various embodiments of the present application are directed towards a level shifter with temperature compensation. In some embodiments, the level shifter comprises a transistor, a first resistor, and a second resistor. The first resistor is electrically coupled from a first source/drain of the transistor to a supply node, and the second resistor is electrically coupled from a second source/drain of the transistor to a reference node. Further, the first and second resistors have substantially the same temperature coefficients and comprise group III-V semiconductor material. By having both the first and second resistors, the output voltage of the level shifter is defined by the resistance ratio of the resistors. Further, since the first and second resistors have the same temperature coefficients, temperature induced changes in resistance is largely cancelled out in the ratio and the output voltage is less susceptible to temperature induced change than the first and second resistors individually.