M-Type HV MOS Transistor Breakdown Voltage Optimization
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The breakdown voltage of M-type HV MOS transistor devices is lower than that of circular HV MOS transistor devices, limiting the voltage endurance ability of integrated chip circuits when both types are integrated together.
Innovation Solution
The breakdown voltage of M-type HV MOS transistor devices is increased by adjusting the doping concentration ratio of the P-type first doped region to the N-type deep well in electric field concentration regions, with a higher ratio within these regions compared to outside regions, optimizing the chip's overall breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If M-type HV MOS transistor device structure is used to increase turn-on current and minimize device area, then productivity and device integration are improved, but breakdown voltage decreases limiting chip voltage endurance
Solution Approach 1:
The patent applies local quality by creating electric field concentration regions with specific doping concentration ratios within the M-type HV MOS transistor device. These localized regions have different doping characteristics (first ratio inside electric field concentration regions, second ratio outside) to optimize breakdown voltage in critical areas while maintaining the overall M-type structure for high productivity and area efficiency.
Solution Approach 2:
The patent utilizes parameter changes by adjusting doping concentrations in different regions of the device. Specifically, it controls the doping concentration ratio of the first doped region to the deep well differently inside versus outside the electric field concentration regions, thereby modifying the electrical characteristics to achieve both high turn-on current and adequate breakdown voltage.
2Ease of manufacture
If uniform doping concentration ratio is used throughout the device, then manufacturing simplicity is maintained, but breakdown voltage cannot be optimized in critical electric field regions
Solution Approach 1:
The patent implements local quality by differentiating doping concentration ratios between regions: a first ratio within electric field concentration regions and a second ratio outside these regions. This localized differentiation optimizes breakdown voltage where electric fields are concentrated while maintaining manufacturing feasibility through region-specific doping control.
Solution Approach 2:
The patent applies segmentation by dividing the device into distinct doping regions based on electric field concentration areas. The device structure is segmented into regions with different doping characteristics, allowing independent optimization of breakdown voltage in critical areas without complicating the entire manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively raises the breakdown voltage of M-type HV MOS transistor devices and integrated chip circuits, enhancing their voltage endurance capabilities.
Implementation Method 1
The substrate has at least one electric field concentration region... a doping concentration of the P-type first doped region and a doping concentration of the N-type deep well in each electric field concentration region have a first ratio, a doping concentration of the P-type first doped region and a doping concentration of the N-type deep well outside each electric field concentration region have a second ratio
Data Source
AI summary
The present invention provides a method of fabricating a HV MOS transistor device, including forming a deep well in a substrate, and the deep well; forming a first doped region in the deep well, and the first doped region, wherein a doping concentration of the first doped region and a doping concentration of the deep well in at least one electric field concentration region has a first ratio, the doping concentration of the first doped region and the doping concentration of the deep well outside the electric field concentration region has a second ratio, and the first ratio is greater than the second ratio; and forming a high voltage well in the substrate, and forming a second doped region and a third doped region respectively in the deep well and in the high voltage well.