High-Voltage Resistor Junction Termination for Breakdown Control
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Solution Overview
Problem
Conventional high voltage resistors suffer from device breakdown issues due to limited breakdown voltage, which is constrained by doping concentration and electric field intensity, particularly in semiconductor integrated circuits.
Innovation Solution
The method involves forming a high voltage semiconductor device with a P/N junction and field plates over isolation structures, where the doped regions and field plates collectively form high-voltage junction termination (HVJT) devices to reduce electric field intensity and increase breakdown voltage, allowing the resistor to handle higher voltages without device breakdown.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional high voltage resistors use a P/N junction to sustain breakdown voltage, then the device can operate at high voltages, but the breakdown voltage is limited by doping concentration and electric field intensity
Solution Approach 1:
The patent segments the high voltage resistor structure by introducing separate field plates positioned over isolation structures adjacent to the resistor. These field plates create distinct electric field management zones that segment the overall voltage stress, allowing the P/N junction to sustain higher breakdown voltages without requiring optimized doping concentrations throughout the entire device structure.
Solution Approach 2:
The field plates act as intermediary elements between the high voltage resistor and the underlying P/N junction. By positioning field plates over isolation structures, the patent introduces intermediate electric field control layers that mediate the electric field distribution, reducing peak field intensity at the junction while maintaining high voltage sustainability.
2Reliability
If doping concentration is increased to raise breakdown voltage, then the device can withstand higher voltages, but the electric field intensity increases causing device breakdown
Solution Approach 1:
The patent converts the harmful effect of high electric field intensity into a beneficial field distribution pattern. By introducing field plates over isolation structures, the previously harmful concentrated electric field is transformed into a distributed field pattern where the field plates themselves experience the high field intensity, protecting the P/N junction from breakdown while maintaining high voltage operation.
Solution Approach 2:
The field plates serve as intermediary structures that absorb and distribute the harmful electric field intensity. Positioned between the high voltage terminal and the P/N junction, these field plates mediate the electric field interactions, allowing the junction to operate at high voltages without experiencing destructive field intensities.
3Reliability
If field plates are added to reduce electric field intensity, then breakdown voltage increases, but the device structure becomes more complex
Solution Approach 1:
The patent merges the field plate structures with existing isolation structures in the semiconductor device. By positioning field plates over the isolation structures that already exist between adjacent devices, the design combines two functions into a single integrated structure, reducing overall device complexity while achieving enhanced breakdown voltage performance.
Solution Approach 2:
The isolation structures serve multiple functions: they provide electrical isolation between adjacent devices and simultaneously support field plates for electric field management. This multi-functionality reduces the need for separate field plate support structures, simplifying the overall device architecture while maintaining high breakdown voltage capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly enhances the breakdown voltage of high voltage resistors, enabling them to tolerate voltages up to 730 volts or more, compared to conventional devices which typically break down at around 470 volts, while maintaining compatibility with existing fabrication processes.
Implementation Method 1
the doped regions and field plates collectively form high-voltage junction termination (HVJT) devices to reduce electric field intensity and increase breakdown voltage
Data Source
AI summary
High voltage semiconductor devices are described herein. An exemplary semiconductor device includes a substrate, a first doped region disposed in the substrate and doped with a first doping polarity, and a second doped region disposed in the substrate and horizontally outside the first doped region. The second doped region is doped with a second doping polarity opposite to the first doping polarity. The semiconductor device further includes a third doped region disposed completely within the first doped region. The third doped region is doped with the second doping polarity. The semiconductor device further includes a first isolation structure disposed over the first doped region and spaced apart from the second doped region and the third doped region, a second isolation structure disposed over the first doped region and the third doped region, and a resistor disposed over the first isolation structure.