High-Voltage Transistor ESD Protection via Feedback Loop

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Solution Overview

Problem

High-voltage components in electronic devices lack effective electrostatic discharge (ESD) protection, allowing instantaneous large currents from ESD events to damage internal circuits.

Innovation Solution

A high-voltage circuitry device with a high-voltage transistor, a protection component, and a feedback component, where the protection component is coupled between the source and ground, and the feedback component, including a capacitor and resistor, ensures the transistor remains in a turned-on state to divert ESD current to ground, preventing damage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a high-voltage component is used to provide high-voltage processing capability, then the device can operate in high-voltage environments and withstand electrostatic discharge current, but the high-voltage component cannot provide effective ESD protection and the instantaneous large current may still flow to internal circuits causing damage

Engineering Contradiction:
ImproveESD protection capabilityVSAvoidcircuit structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent employs a feedback mechanism where a feedback component (such as a capacitor or diode) is connected between the source of the high-voltage transistor and the gate. During an ESD event, the voltage spike at the source is fed back to the gate through the feedback component, ensuring the gate-source voltage remains sufficient to keep the transistor in saturation mode. This maintains the transistor's ability to handle the ESD current while providing effective protection to internal circuits.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent introduces a feedback component as an intermediary element that mediates between the source voltage spike and the gate control. This intermediary component (capacitor or diode) transfers the necessary voltage information to maintain transistor operation during ESD events without allowing the harmful current to reach internal circuits, thus resolving the contradiction between protection capability and circuit simplicity.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If the high-voltage transistor is used alone without feedback mechanism, then the circuit structure remains simple, but the transistor cannot maintain turned-on state during ESD events and cannot effectively divert the current

Engineering Contradiction:
ImproveESD protection effectivenessVSAvoidcircuit structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The feedback component creates a closed-loop system where the source voltage is continuously monitored and fed back to the gate. During ESD events, this feedback ensures the gate voltage adjusts automatically to maintain the transistor in the appropriate operating state, enabling effective current diversion while keeping the overall circuit design relatively simple.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The feedback mechanism enables the transistor circuit to self-regulate during ESD events. The voltage spike at the source automatically triggers the feedback component to adjust the gate voltage, allowing the circuit to maintain proper operation without external intervention or complex control logic, thus achieving reliable ESD protection with minimal added complexity.

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively provides stable and efficient ESD protection by ensuring the high-voltage transistor remains on during ESD events, diverting the current to ground and preventing damage to internal circuits.

Implementation Method 1

The capacitor is coupled between a gate of the high-voltage transistor and the protection component

Methodology Applied
Scientific EffectCapacitance: Capacitance

Implementation Method 2

The resistor is coupled between the gate of the high-voltage transistor and the ground

Methodology Applied
Scientific EffectJoule heating: Joule Heating

Data Source

PatentUS11302686B2High-voltage circuitry device and ring circuitry layout thereof
Publication Date: 2022.04.12 NUVOTON
  • US11302686B2 patent drawing
  • US11302686B2 patent drawing
  • US11302686B2 patent drawing

AI summary

A high-voltage circuitry device is provided. The high-voltage circuitry device includes a high-voltage transistor, a protection component and a feedback component. The high-voltage transistor has a gate, a drain and a source. The protection component is coupled between the source of the high-voltage transistor and the ground. When a current corresponding to an electrostatic discharge (ESD) event flows through the drain of the high-voltage transistor, the current flows from the drain of the high-voltage transistor to the ground through the high-voltage transistor and the protection component. The feedback component is coupled between the protection component, the ground and the gate of the high-voltage transistor. When the ESD event occurs, the feedback component enables the high-voltage transistor to stay on a turned-on state to pass the current.