High-Voltage Transistor Integrated Over-Voltage Protection Circuit
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Solution Overview
Problem
Conventional lateral high-voltage transistors are unable to handle high avalanche currents due to localized breakdowns, limiting their ability to protect against over-voltage conditions, which necessitates improved immunity to damage during such events.
Innovation Solution
Integration of an over-voltage protection circuit within high-voltage transistors that monitors voltage and turns the transistor ON during over-voltage conditions, distributing current more uniformly to handle higher currents and energies, thereby enhancing unclamped inductive switching and electrostatic discharge ratings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional lateral high-voltage transistors are used, then fabrication complexity is reduced (similar to low-voltage devices), but the ability to handle avalanche currents during over-voltage conditions deteriorates
Solution Approach 1:
The patent combines the high-voltage transistor and over-voltage protection circuit into a single integrated device. The protection circuit is formed using the same semiconductor substrate and fabrication processes as the HV transistor, merging two previously separate functions into one unified structure that maintains manufacturing simplicity while adding protection capability.
Solution Approach 2:
The integrated device performs multiple functions: the HV transistor provides normal switching operation, while the integrated protection circuit provides over-voltage protection during avalanche conditions. This multi-functional design allows a single device to handle both standard operation and abnormal protection scenarios without requiring separate components.
2Adaptability or versatility
If lateral high-voltage transistors are used, then integration with low-voltage devices is enabled, but current handling capability during over-voltage events deteriorates
Solution Approach 1:
The patent merges the HV transistor and protection circuit onto the same semiconductor substrate using compatible fabrication processes. This integration enables co-fabrication with low-voltage devices while the protection circuit is specifically designed to handle avalanche currents that lateral transistors alone cannot withstand.
3Reliability
If over-voltage protection circuit is integrated, then device complexity increases, but over-voltage protection capability improves
Solution Approach 1:
The protection circuit is integrated into the same semiconductor substrate as the HV transistor, sharing common structures such as the drift region and utilizing the same fabrication process steps. This merging approach adds protection functionality without requiring entirely separate device structures, thereby limiting the increase in overall device complexity.
Solution Approach 2:
The protection circuit is designed to automatically activate during over-voltage conditions without requiring external control signals. The circuit self-monitors the voltage across the HV transistor and autonomously turns on the protection path when avalanche conditions are detected, eliminating the need for complex external control logic.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution allows high-voltage transistors with integrated over-voltage protection to manage more current and energy during over-voltage events, providing improved ratings for unclamped inductive switching and electrostatic discharge, thus enhancing their reliability and protection capabilities.
Implementation Method 1
The over-voltage protection circuit is configured to monitor a voltage across the high-voltage transistor to detect an over-voltage condition of the high-voltage transistor
Implementation Method 2
the high-voltage transistor with an integrated over-voltage protection circuit can handle more current (and, therefore, more energy) during an over-voltage condition... By distributing the current more uniformly, the high-voltage transistor... can handle more current
Implementation Method 3
when the high-voltage transistor is in over-voltage condition, the high-voltage transistor is turned ON and dissipates the power from the over-voltage event through its channel
Data Source
AI summary
The present technology discloses a high-voltage device comprising a high-voltage transistor and an integrated over-voltage protection circuit. The over-voltage protection circuit monitors a voltage across the high-voltage transistor to detect an over-voltage condition of the high-voltage transistor, and turns the high-voltage transistor ON when the over-voltage condition is detected. Thus, once the high-voltage transistor is in over-voltage condition, the high-voltage transistor is turned ON and can dissipate the power from the over-voltage event through its channel.