HVIC Junction Termination Structure Integrating Bootstrap Diode
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing high-voltage integrated circuit (HVIC) chip structures require complex configurations to prevent voltage punching through from high-side to low-side circuits, necessitating additional circuit area for bootstrap diodes, which complicates the design and increases power consumption.
Innovation Solution
The proposed HVJT structure integrates a bootstrap diode into its semiconductor structure, forming a PNP path from the P-type doped structure to the substrate, allowing the bootstrap diode to surround the high-side circuit without occupying additional circuit area, using epitaxial layers and doped regions to provide voltage levels and isolation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a separate bootstrap circuit is added to the HVIC chip, then the high-side circuit can be driven, but the circuit structure becomes more complex and occupies additional area
Solution Approach 1:
The patent merges the bootstrap diode function into the HVJT structure by forming a PNP path using the P-type doped structure, N-type epitaxial layer, and substrate. This integration eliminates the need for a separate bootstrap circuit while providing both high-voltage protection and bootstrap functionality in a single structure.
Solution Approach 2:
The HVJT structure is designed to serve multiple functions: it provides high-voltage junction termination to prevent voltage punching through, forms a PNP path that acts as a bootstrap diode for the high-side circuit, and surrounds the high-side circuit for protection. This multi-functionality reduces overall device complexity.
2Adaptability or versatility
If additional bootstrap diode structures are added, then bootstrap function is provided, but the available circuit area is reduced
Solution Approach 1:
The bootstrap diode function is merged into the existing HVJT structure. The P-type doped structure, N-type epitaxial layer, and substrate form a PNP path that provides bootstrap functionality without requiring additional discrete components, thereby maximizing the use of available circuit area.
Solution Approach 2:
The bootstrap PNP path is nested within the HVJT structure. The P-type doped structure and N-type epitaxial layer are positioned within the termination region, allowing the bootstrap function to be embedded within the protective structure rather than occupying separate space.
3Ease of manufacture
If the HVJT structure is simplified, then manufacturing is easier, but voltage protection capability may be compromised
Solution Approach 1:
The patent combines voltage protection and bootstrap functions into a single integrated structure. The HVJT structure with its P-type doped region, N-type epitaxial layer, and substrate connection provides both voltage termination and bootstrap diode action, simplifying manufacturing while maintaining reliability through functional integration.
Solution Approach 2:
The HVJT structure is designed to perform multiple functions simultaneously: voltage punching-through prevention through the termination structure, and bootstrap diode operation through the formed PNP path. This multi-functionality ensures that simplification does not compromise protection capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This integration simplifies the HVIC chip structure, reduces power consumption, and effectively prevents voltage damage to low-side circuits by embedding the bootstrap diode within the HVJT structure, enhancing power efficiency and design flexibility.
Implementation Method 1
The substrate, the N-type doped structure and the P-type doped structure form a PNP path along a perpendicular direction to the substrate, wherein the N-type doped structure and the P-type doped structure provide a bootstrap diode
Implementation Method 2
an N-type epitaxial doped region is disposed in the epitaxial layer, contacting with the substrate between the PNP path and the N-type cathode structure, and surrounding the high-side circuit
Implementation Method 3
An N-type doped structure is disposed in the epitaxial layer, contacting with the substrate. A P-type doped structure is disposed on the N-type doped structure
Data Source
AI summary
A HVJT structure of HVIC includes P-type substrate. Epitaxial layer is formed on the substrate. N-type doped structure is formed in the epitaxial layer, contacting with the substrate. P-type doped structure is in the N-type doped structure connecting with anode. The substrate, the N-type doped structure and the P-type doped structure form a PNP path along a perpendicular direction to the substrate, wherein NP provide bootstrap diode function and surround the high-side circuit at a horizontal direction. N-type cathode structure is in the epitaxial layer. N-type epitaxial doped region contacts with the substrate, between the PNP path and the N-type cathode structure, also surrounding the high-side circuit. Gate structure is over the N-type epitaxial doped region, between the P-type doped structure and N-type cathode structure. P-type base doped structure is in the epitaxial layer adjacent to the N-type doped structure, to provide a substrate voltage to the substrate.