Hybrid Backside Thermal Structure for Thin-Die Hotspot Spreading
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor packages with thin dies face challenges in mitigating local hotspots due to ineffective lateral heat spreading, leading to high die temperatures and performance throttling.
Innovation Solution
A hybrid backside thermal structure comprising materials with significantly different thermal conductivities and coefficients of thermal expansion (CTEs) is integrated onto the semiconductor substrate, enhancing heat transfer and mitigating thermal stresses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If thin dies are used in semiconductor packages, then device integration and miniaturization are improved, but lateral heat spreading becomes ineffective leading to local hotspots
Solution Approach 1:
The patent applies composite materials by integrating a hybrid backside thermal structure comprising multiple materials with different thermal conductivities. This includes a first material with higher thermal conductivity and a second material with lower thermal conductivity, arranged in a composite configuration that enables both effective heat spreading and hotspot mitigation, resolving the thermal management challenges of thin dies
Solution Approach 2:
The patent implements local quality by creating regions with different thermal properties within the backside thermal structure. The hybrid structure includes areas with varying thermal conductivities tailored to address specific thermal challenges in different regions of the die, enabling localized heat management while maintaining overall thin die architecture
2Temperature
If high thermal conductivity materials are used to mitigate hotspots, then heat transfer is improved, but thermal expansion mismatch increases causing package warpage
Solution Approach 1:
The patent uses composite materials to balance thermal conductivity and thermal expansion properties. The hybrid backside thermal structure combines materials with different thermal conductivities and coefficients of thermal expansion, creating a composite that achieves effective heat transfer while the varied CTE distribution mitigates overall package warpage
Solution Approach 2:
The patent applies parameter changes by carefully selecting and combining materials with specific thermal conductivity and CTE values. The hybrid structure utilizes materials whose CTE differences are strategically managed to reduce warpage while maintaining high heat transfer efficiency, optimizing both thermal performance and structural stability
3Volume of moving object
If die thickness is reduced for miniaturization, then device size is decreased, but heat dissipation capability deteriorates
Solution Approach 1:
The patent addresses heat dissipation in thin dies by transitioning from relying solely on vertical heat paths to incorporating significant lateral heat spreading through the hybrid backside thermal structure. This dimensional approach to heat management enables effective thermal performance in miniaturized devices with reduced die thickness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hybrid structure improves thermal performance by efficiently diffusing heat from hotspots, reducing temperature gradients, and minimizing package warpage, thereby maintaining consistent die performance.
Implementation Method 1
A hybrid backside thermal structure comprising materials with significantly different thermal conductivities and coefficients of thermal expansion (CTEs) is integrated onto the semiconductor substrate, enhancing heat transfer
Implementation Method 2
A hybrid backside thermal structure comprising materials with significantly different thermal conductivities and coefficients of thermal expansion (CTEs) is integrated onto the semiconductor substrate
Data Source
AI summary
An integrated circuit (IC) die structure comprises a substrate material comprising silicon. Integrated circuitry is over a first side of the substrate material. A composite layer is in direct contact with a second side of the substrate material. The second side is opposite the first side. The composite layer comprises a first constituent material associated with a first linear coefficient of thermal expansion (CTE), and a first thermal conductivity exceeding that of the substrate. The composite layer also comprises a second constituent material associated with a second CTE that is lower than the first, and a second thermal conductivity exceeding that of the substrate.