Sub-10 Micrometer Hybrid Bond Interconnects for IC Die Stacking
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current IC packaging technologies face challenges with high interconnect density and increased area consumption due to the use of solder-based interconnects, leading to decreased performance and manufacturing yield, especially as the number of input/output (IO) lanes and complexity grow in semiconductor devices.
Innovation Solution
The implementation of a quasi-monolithic hierarchical integration architecture using hybrid bonds with sub-10 micrometer pitch for die-to-die interconnects, allowing for a higher interconnect density and reduced effective interconnection area, achieved through the stacking of IC dies with inorganic dielectric layers and through-dielectric vias for electrical coupling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If solder-based interconnects are used for die-to-die connections, then electrical connectivity is achieved, but interconnect density is limited and area consumption increases
Solution Approach 1:
The patent changes the pitch parameter of interconnects from conventional larger dimensions to sub-10 micrometer dimensions, enabling significantly higher interconnect density. This parameter change allows more interconnects to be packed into the same area, directly resolving the contradiction between increasing interconnect density and reducing area consumption.
Solution Approach 2:
The patent transitions from two-dimensional planar interconnect arrangements to three-dimensional stacked architectures with vertical interconnects. By utilizing the vertical dimension through multiple die stacking and through-dielectric vias, the system achieves higher interconnect density without proportionally increasing the footprint area.
2Adaptability or versatility
If the number of IO lanes and device complexity increase, then functionality is enhanced, but performance decreases due to increased area consumption and delays
Solution Approach 1:
By stacking IC dies vertically and implementing interconnects in the vertical dimension, the patent reduces lateral signal travel distances. This three-dimensional architecture enables enhanced functionality with more IO lanes while maintaining short signal paths that preserve performance and minimize delays.
Solution Approach 2:
The patent divides the system into multiple separate IC dies, each optimized for specific functionalities. This segmentation allows independent optimization of each die while maintaining high-speed interconnects between them, enabling enhanced overall functionality without sacrificing performance.
3Ease of manufacture
If conventional IC packaging is used, then manufacturing is simplified, but manufacturing yield decreases with increased complexity
Solution Approach 1:
By dividing the system into separate IC dies that can be manufactured independently using conventional processes, the patent maintains manufacturing simplicity for each individual die. The segmentation allows each die to be optimized and manufactured separately, improving yield by isolating defects to individual dies rather than requiring entire large-scale integrated circuits to be discarded.
Data Source
AI summary
Embodiments of the present disclosure provide a microelectronic assembly comprising: a first integrated circuit (IC) die, the first IC die comprising an input/output (IO) circuit; and a plurality of IC dies, the plurality of IC dies comprising a second IC die, the second IC die comprising a microcontroller circuit to control the IO circuit, wherein the first IC die and the plurality of IC dies are coupled with interconnects having a pitch of less than 10 micrometers between adjacent ones of the interconnects.