Hybrid Bonded Interconnect Bridging for Sub-10 µm Chiplet Links
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Solution Overview
Problem
Existing solutions for high-performance chiplet integration require connection pitches greater than 25 micrometers, limiting the bandwidth and efficiency of chiplet connections.
Innovation Solution
The use of a hybrid bond, comprising a copper bond and an oxide bond, for direct bonding of an interconnect die to chiplets, enabling finer pitch connections less than 10 micrometers, along with trans-silicon via connections and conductive pillars for improved power and signal transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If existing bridge or interconnecting die solutions are used to connect chiplets, then connections can be established between chiplets, but the connection pitch must be greater than 25 micrometers, limiting bandwidth and efficiency
Solution Approach 1:
The patent changes the bonding parameters by using hybrid bonding at lower temperatures (e.g., 200-400°C) compared to traditional Cu-Cu bonding (e.g., 400-600°C), enabling finer pitch connections below 10 micrometers while maintaining bond reliability through controlled thermal and mechanical conditions
Solution Approach 2:
The patent employs hybrid bonding that combines different bonding mechanisms (e.g., oxide-to-oxide bonding with copper diffusion bonding) to achieve both fine pitch capability and reliable electrical connection, overcoming the limitations of single-mode bonding approaches
2Productivity
If connection pitch is reduced below 25 micrometers to increase bandwidth, then communication bandwidth improves, but existing bonding techniques cannot achieve such fine pitches with reliable connections
Solution Approach 1:
The patent modifies bonding parameters including temperature, pressure, and bonding sequence to enable reliable connections at sub-10 micrometer pitches, where traditional bonding would fail due to alignment tolerances and material deformation
Solution Approach 2:
The patent performs preliminary surface preparation including oxide formation and planarization before bonding to ensure proper alignment and contact at fine pitches, preventing connection failures before the bonding process occurs
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances signal quality, power efficiency, and overall performance by allowing for increased communication bandwidth through finer pitch connections between chiplets.
Implementation Method 1
The use of a hybrid bond, comprising a copper bond and an oxide bond, for direct bonding of an interconnect die to chiplets
Data Source
AI summary
A chip for hybrid bonded interconnect bridging for chiplet integration, the chip comprising: a first chiplet; a second chiplet; an interconnecting die coupled to the first chiplet and the second chiplet through a hybrid bond.