Hybrid-Bonded Die Structure for Minimal Edge Exclusion
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Solution Overview
Problem
Conventional methods for singulating semiconductor elements result in significant edge exclusion zones, reducing the area efficiency of circuitry and increasing the distance between electrical connections, which limits the density and performance of chip or chiplet designs, especially for smaller dies.
Innovation Solution
The use of reactive ion etching (RIE) and other precise singulation techniques to reduce edge exclusion distances, allowing for direct hybrid bonding of semiconductor elements without adhesives, enabling closer spacing and increased area efficiency by minimizing the edge exclusion zones and facilitating direct electrical connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If conventional singulation methods are used, then manufacturing simplicity is maintained, but edge exclusion zones increase reducing area efficiency
Solution Approach 1:
The patent replaces conventional mechanical singulation methods (sawing, dicing) with direct hybrid bonding techniques that eliminate the need for physical cutting. This substitution allows conductive contacts to be positioned at the very edges of semiconductor elements without requiring edge exclusion zones, thereby maximizing area efficiency while maintaining manufacturing feasibility through advanced bonding processes.
Solution Approach 2:
The patent changes the critical parameter from edge exclusion distance to direct edge contact capability. By modifying the bonding interface parameters and using direct hybrid bonding with precise alignment, the technology enables conductive contacts to extend to the physical edges of elements, transforming the design space to achieve superior area utilization without proportionally increasing process complexity.
2Area of stationary object
If edge exclusion zones are reduced, then area utilization improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent replaces mechanical cutting processes with direct bonding processes that inherently provide superior alignment precision. The direct hybrid bonding method uses controlled interface formation and bonding mechanisms to achieve sub-micron alignment accuracy, enabling edge-to-edge contact between conductive elements without the tolerance accumulation issues of multi-step mechanical processes.
Solution Approach 2:
The patent performs preliminary alignment and positioning operations before the final bonding step. By pre-positioning elements with high precision and then forming the bonding interface in a controlled manner, the process achieves the required alignment precision for minimal edge exclusion zones while maintaining manufacturing robustness through staged process control.
3Area of stationary object
If direct bonding is used, then area efficiency increases, but bonding process complexity increases
Solution Approach 1:
The patent employs direct hybrid bonding that simultaneously achieves multiple functions: mechanical bonding, electrical interconnection, and thermal management in a single integrated process. This multi-functionality consolidates what would otherwise require separate steps (bonding, wire bonding, underfilling), thereby justifying the increased process complexity through substantial gains in area efficiency and elimination of intermediate structures.
Solution Approach 2:
The patent merges the bonding interface with the electrical connection interface, eliminating the need for separate bonding and interconnection structures. By combining these functions into a single direct hybrid bonding interface, the technology achieves superior area efficiency while the process complexity is managed through integration of previously separate manufacturing steps into a unified bonding operation.
4Quantity of substance
If closer spacing is implemented, then I/O density increases, but connection reliability may decrease
Solution Approach 1:
The patent replaces mechanical connection methods (solder, wire bonding) with direct hybrid bonding that creates robust electrical and mechanical interfaces at closer spacings. The direct bonding mechanism provides inherent structural integrity and electrical performance that maintains connection reliability even when elements are positioned at minimal distances, enabling higher I/O density without sacrificing reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces edge exclusion distances, enhancing the area utilization of smaller dies, improving the density and performance of chip or chiplet designs by allowing for closer spacing and more efficient electrical connections, thereby increasing functional I/O counts and reducing latency.
Implementation Method 1
The use of reactive ion etching (RIE) and other precise singulation techniques to reduce edge exclusion distances
Implementation Method 2
Semiconductor elements, such as semiconductor wafers or integrated device dies, can be stacked and directly bonded to one another without an adhesive
Data Source
AI summary
A bonded structure can include a carrier including a first conductive contact and a second conductive contact, a first singulated element including a third conductive contact directly bonded to the first conductive contact without an adhesive, and a second singulated element including a fourth conductive contact directly bonded to the second conductive contact without an adhesive, wherein the first and second conductive contacts are spaced apart by a contact spacing of no more than 250 microns.