Hybrid-Bonded Semiconductor Package for Passive Device Isolation
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Solution Overview
Problem
Conventional semiconductor packaging technologies face challenges in integrating passive devices like inductors or capacitors without affecting the performance of active devices, leading to increased form factor and manufacturing costs due to layout limitations and induced current effects.
Innovation Solution
A multi-chip semiconductor package design that positions passive devices away from active regions using through dielectric vias and hybrid bonding techniques, allowing for face-to-face or face-to-back configurations without occupying active device real estate, thus reducing form factor and manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If passive devices are integrated close to active devices to increase integration density, then the number of components per unit area increases, but the performance of active devices deteriorates due to induced current effects
Solution Approach 1:
The patent segments the semiconductor device into distinct active regions and passive device regions, separated by isolation structures. This spatial segmentation allows passive devices to be integrated without interfering with active device performance, as the isolation structures prevent harmful electromagnetic interactions while maintaining high integration density.
Solution Approach 2:
The patent extracts passive devices from the active device regions and places them in dedicated passive device regions. This extraction eliminates the harmful induced current effects that would occur if passive devices were integrated alongside active devices, while still achieving high integration density through efficient layout optimization.
2Reliability
If passive devices are positioned away from active regions using through dielectric vias and hybrid bonding, then active device performance is maintained, but manufacturing complexity increases
Solution Approach 1:
The patent merges multiple packaging techniques (through dielectric vias and hybrid bonding) into a unified manufacturing approach. By combining these techniques, the patent achieves both performance isolation and efficient integration in a coordinated manner, reducing the overall manufacturing complexity compared to using separate processes.
Solution Approach 2:
The patent utilizes vertical through dielectric vias to position passive devices in different spatial dimensions relative to active devices. This dimensional approach allows passive devices to be placed away from active regions without increasing lateral footprint, simplifying the manufacturing layout while maintaining performance isolation.
3Ease of manufacture
If conventional packaging technologies are used to integrate passive devices, then manufacturing processes are simpler, but the form factor increases and costs increase
Solution Approach 1:
The patent employs vertical through dielectric vias and multi-layer stacking to integrate passive devices in the vertical dimension rather than spreading them out horizontally. This dimensional transition reduces the lateral form factor while maintaining manufacturability through established via and bonding processes.
Solution Approach 2:
The patent nests passive devices within the same package structure as active devices, utilizing the same substrate and interconnect layers. This nesting approach allows both device types to coexist in a compact form factor without requiring separate packaging processes, maintaining ease of manufacture while reducing overall package size.
Data Source
AI summary
The present disclosure provides a semiconductor package, including a first semiconductor structure, including an active region in a first substrate portion, wherein the active region includes at least one of a transistor, a diode, and a photodiode, a first bonding metallization over the first semiconductor structure, a first bonding dielectric over the first semiconductor structure, surrounding and directly contacting the first bonding metallization, a second semiconductor structure over a first portion of the first semiconductor structure, wherein the second semiconductor structure includes a conductive through silicon via, a second bonding dielectric at a back surface of the second semiconductor structure, a second bonding metallization surrounded by the second bonding dielectric and directly contacting the second bonding dielectric, and a conductive through via over a second portion of the first semiconductor structure different from the first portion.