Hybrid Bonded Semiconductor Capacitor for Charge Accumulation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Three-dimensional semiconductor devices face challenges in forming high-density electrical connections that effectively improve charge accumulation, particularly in capacitor elements within stacked semiconductor structures.
Innovation Solution
A semiconductor structure is developed with a capacitor element formed by hybrid bonding, where upper and lower electrode patterns and interconnection structures are directly bonded without an intermediate layer, enhancing charge accumulation through vertical cross-sectional areas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional Cu-to-Cu bonding technology with macromolecular dielectric layer is used, then bonding surfaces are fully covered and gaps are filled, but the charge accumulation effect is insufficient
Solution Approach 1:
The patent transitions from planar capacitor structures to three-dimensional stacked semiconductor structures with vertical capacitor elements. By stacking multiple semiconductor wafers or substrates in the vertical direction and forming capacitors between adjacent wafers, the invention utilizes the third dimension (vertical space) to increase charge accumulation capacity without occupying additional planar area. This dimensional transition allows multiple capacitor elements to be stacked vertically, significantly improving the quantity of charge that can be accumulated.
2Area of stationary object
If three-dimensional semiconductor devices are formed by stacking wafers, then occupied area is reduced and performance is improved, but forming high-density electrical connections is challenging
Solution Approach 1:
The patent combines multiple functions into a single hybrid bonding process. The Cu-to-Cu bonding simultaneously achieves electrical connection between stacked wafers and forms capacitor elements, merging interconnect formation and capacitor formation into one step. This eliminates the need for separate via formation, filling, and capacitor fabrication processes, thereby reducing device complexity despite the three-dimensional stacking architecture.
Solution Approach 2:
The Cu-to-Cu bonding interface serves multiple functions: it provides electrical interconnection between adjacent wafers through copper metallization and simultaneously forms capacitor elements utilizing the dielectric layer and electrode patterns. This multi-functional bonding structure eliminates the need for separate interconnect and capacitor structures, simplifying the overall device architecture while maintaining high-density electrical connections in the vertical direction.
3Quantity of substance
If hybrid bonding is used to form high-density electrical connections, then charge accumulation is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent incorporates alignment marks and positioning structures on the bonding surfaces of adjacent wafers before the hybrid bonding process. These preliminary positioning features guide the alignment of Cu-to-Cu bonding interfaces and capacitor electrode patterns, ensuring precise registration during stacking. By preparing alignment references in advance, the invention reduces the manufacturing precision requirements during the actual bonding process while still achieving high-density electrical connections and effective charge accumulation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hybrid bonding technique improves charge accumulation efficiency by forming a high-density capacitor element with enhanced electrical connections, reducing power loss and increasing performance in three-dimensional semiconductor devices.
Implementation Method 1
a hybrid bonding may then be achieved by a metal-to-metal bonding (i.e., the Cu-to-Cu bonding) and a dielectric layer-to-dielectric layer bonding
Data Source
AI summary
A semiconductor structure includes a first layer, a second layer, a first interconnection layer, and a second interconnection layer. The first layer includes an upper electrode pattern, and the second layer includes a lower electrode pattern, wherein the upper electrode pattern is opposite to the lower electrode pattern. The first interconnection layer includes a plurality of first interconnect structures electrically connected on the upper electrode pattern. The second interconnection layer includes a plurality of second interconnect structures electrically connected on the lower electrode pattern. The first interconnect structures on the upper electrode pattern are hybrid bonded with the second interconnect structures on the lower electrode pattern. Therefore, the upper electrode patterns and the lower electrode patterns are joined by hybrid bonding to form a capacitor element.