Hybrid Bonding Pad Buffer Structure for CTE Stress Relief
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Solution Overview
Problem
The coefficient of thermal expansion (CTE) mismatch between metal and dielectric materials in hybrid bonding processes leads to thermal stress and cracks during the bonding of semiconductor devices.
Innovation Solution
Incorporating a buffer structure with a CTE intermediate to the metal and dielectric materials to absorb the thermal expansion difference, preventing cracks during hybrid bonding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If hybrid bonding is performed using metal and dielectric materials with different CTEs, then bonding density and interconnect density are improved, but thermal stress and cracks are induced during the bonding process
Solution Approach 1:
A buffer layer is introduced as an intermediary component between the metal bonding pad and the dielectric structure. This buffer layer has a CTE that is intermediate between the metal and dielectric materials, serving as a mediator that gradually transitions the thermal expansion properties and reduces the abrupt CTE mismatch at the metal-dielectric interface, thereby preventing crack formation while maintaining hybrid bonding integrity
Solution Approach 2:
The CTE parameter is gradually changed by introducing a buffer layer with intermediate thermal expansion properties. Instead of having a sharp transition between metal and dielectric CTEs, the buffer layer creates a gradient in CTE values, allowing for progressive adaptation to thermal expansion differences and reducing thermal stress concentration during bonding operations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The buffer structure effectively mitigates thermal stress, ensuring the integrity of the semiconductor device by preventing cracks and maintaining structural cohesion.
Implementation Method 1
the coefficient of thermal expansion of the metal material and that of the dielectric material are different, and thus cracks are induced during a hybrid bonding process
Data Source
AI summary
A semiconductor device structure and method for manufacturing the same are provided. The semiconductor device structure includes a substrate, a dielectric structure, a pad, a conductive structure, and a buffer structure. The dielectric structure is disposed on the substrate. The pad is embedded in the dielectric structure. The conductive structure is disposed on the pad. The buffer structure is disposed on the pad and separates the conductive structure from the dielectric structure. A coefficient of thermal expansion (CTE) of the buffer structure ranges between a CTE of the dielectric structure and a CTE of the conductive structure.