Hybrid Bonding Dummy Contacts for Semiconductor Yield
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Solution Overview
Problem
Current hybrid bonding processes for semiconductor devices require multiple patterning steps, leading to high costs and inability to form dummy bonding contacts, which results in nonuniform metal and dielectric distribution, decreased bonding yield, and strength.
Innovation Solution
Incorporation of dummy bonding contacts and interconnects in a single patterning process to enhance bonding contact density and strength, reducing the number of patterning steps and improving the bonding interface's metal and dielectric distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple patterning steps are used in hybrid bonding processes, then bonding contact density can be increased, but fabrication cost increases and process complexity increases
Solution Approach 1:
The patent combines the formation of dummy bonding contacts with functional bonding contacts into a single patterning step. By designing the mask pattern to include both dummy contacts (for uniformity) and functional contacts (for electrical connection), the process merges two previously separate operations into one, reducing fabrication complexity while maintaining high bonding contact density
Solution Approach 2:
The patent performs preliminary design of the mask pattern to pre-determine the locations of both dummy and functional bonding contacts before the actual patterning process. This preliminary action ensures that uniform metal and dielectric distribution is achieved from the outset, eliminating the need for subsequent corrective patterning steps
2Ease of manufacture
If dummy bonding contacts are not formed, then fabrication process is simpler, but metal and dielectric distribution becomes nonuniform, decreasing bonding yield and strength
Solution Approach 1:
The patent applies local quality by strategically placing dummy bonding contacts in specific regions where metal and dielectric accumulation occurs. These dummy contacts locally absorb excess material and provide nucleation sites for uniform deposition, ensuring that problematic areas receive targeted correction without complicating the overall fabrication process
Solution Approach 2:
The patent achieves homogeneity in metal and dielectric distribution by incorporating dummy bonding contacts that serve as uniform reference points across the substrate. These dummy contacts ensure consistent material deposition and adhesion properties throughout the bonding interface, thereby improving bonding yield and strength
Data Source
AI summary
Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a method for forming a semiconductor device is disclosed. A first interconnect layer including first interconnects is formed above a first substrate. A first bonding layer including first bonding contacts is formed above the first interconnect layer, such that each first interconnect is in contact with a respective first bonding contact. A second interconnect layer including second interconnects is formed above a second substrate. A second bonding layer including second bonding contacts is formed above the second interconnect layer, such that at least one second bonding contact is in contact with a respective second interconnect, and at least another second bonding contact is separated from the second interconnects. The first and second substrates are bonded in a face-to-face manner, such that each first bonding contact is in contact with one second bonding contact at a bonding interface.