Hybrid Bonding Interconnects With Vertically Offset Bonding Surfaces
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Solution Overview
Problem
Conventional hybrid bonding processes in semiconductor devices face challenges in aligning oxide and metal bonding zones, leading to misalignment and reduced bonding strength due to insufficient surface area for forming mechanically robust oxide-oxide bonds.
Innovation Solution
The implementation of three-dimensional hybrid-bonding interconnect structures with vertically offset bonding surfaces, which include additional surface area for oxide bonding and facilitate mechanical alignment through a perimeter structure with a vertically offset uppermost surface and lateral surfaces, providing increased bond strength and alignment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional hybrid bonding processes are used with coplanar bonding surfaces, then the bonding process is simpler to implement, but alignment precision between oxide and metal bonding zones deteriorates leading to misalignment
Solution Approach 1:
The patent transitions from coplanar bonding surfaces to vertically offset bonding surfaces, introducing a vertical dimension to the bonding interface. The first bonding surface is positioned at a different vertical level than the second bonding surface, creating a stepped configuration that enables precise alignment of oxide and metal bonding zones through vertical positioning rather than relying solely on lateral alignment.
Solution Approach 2:
The bonding structure employs asymmetric vertical positioning where the first bonding surface and second bonding surface are deliberately placed at different heights. This asymmetric configuration creates distinct alignment references for the oxide and metal bonding zones, improving alignment precision while the overall process remains manageable.
2Strength
If conventional coplanar bonding surfaces are used, then the bonding structure is simpler, but bonding strength deteriorates due to insufficient surface area for oxide bonding
Solution Approach 1:
By introducing vertical offset between bonding surfaces, the patent effectively utilizes the vertical dimension to create additional bonding surface area. The stepped configuration allows oxide bonding to occur over a larger effective area than would be available on a single coplanar surface, thereby strengthening the oxide-oxide bonds.
3Strength
If vertically offset bonding surfaces are implemented, then bonding strength increases due to additional surface area, but device complexity increases
Solution Approach 1:
The bonding interface is segmented into distinct vertical levels with the first bonding surface and second bonding surface positioned at different heights. This segmentation allows each surface to be optimized for its specific bonding function while the overall structure remains organized and manufacturable through systematic process steps.
4Manufacturing precision
If conventional hybrid bonding is used, then the bonding process is faster, but alignment consistency deteriorates leading to misalignment
Solution Approach 1:
The vertically offset bonding surfaces are prepared in advance with predetermined vertical positions, establishing alignment references before the actual bonding process. This preliminary configuration of the stepped structure enables consistent alignment to be achieved more reliably, reducing the need for complex real-time alignment adjustments during bonding.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the consistency of bonding component alignment and increases bonding strength by providing additional surface area for bonding and mechanical coupling, improving the reliability of semiconductor packages.
Implementation Method 1
During typical hybrid bonding processes, oxide-oxide bonds form between corresponding oxide bonding zones
Implementation Method 2
The temperature and high strength of the oxide-oxide bonds can induce compression to facilitate forming metal-metal bonds between corresponding metal bonding zones
Data Source
AI summary
Semiconductor devices having interconnect structures with vertically offset bonding surfaces, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a semiconductor substrate at least partially covered by a first dielectric material having an upper surface, and an interconnect structure extending therefrom. The interconnect structure can include a plurality of conductive elements, and a continuous region of a first insulating material at least partially between the plurality of conductive elements. The plurality of conductive elements and the continuous region can have coplanar end surfaces. The interconnect structure can further include a perimeter structure at least partially surrounding the plurality of conductive elements and the continuous region. The perimeter structure can have an uppermost surface that can be vertically offset from the upper surface of the first dielectric material and/or the coplanar end surfaces.