Hybrid Bonding Structure With Raised Conductive Layer Exposure
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Solution Overview
Problem
The existing method of hybrid-bonding copper pads through a conductive adhesion layer and dielectric layer results in the dielectric layer becoming too thin during thinning operations, compromising the subsequent bonding process due to the thinness of the conductive adhesion layer.
Innovation Solution
A bonding structure is designed with a low melting point conductive layer between high melting point conductive layers, encapsulated by a dielectric layer, and an upper substrate, where a catalytic layer and interlayer raise the elevation of the bonding layer to increase the thickness of the protective layer, preventing dielectric exposure and ensuring sufficient bonding material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the dielectric layer is thinned to expose the conductive adhesion layer, then the bonding layer can be exposed for bonding, but the dielectric layer becomes too thin which compromises the subsequent bonding operation
Solution Approach 1:
The patent introduces a raised layer that elevates the bonding layer to a higher dimension, allowing the dielectric layer to maintain sufficient thickness while still exposing the bonding layer for bonding operations. This dimensional change resolves the contradiction by decoupling the exposure requirement from the dielectric thickness requirement.
Solution Approach 2:
The raised layer acts as an intermediary structure between the bonding layer and the dielectric layer. It provides mechanical support and maintains the dielectric layer thickness while enabling bonding layer exposure, thus mediating between the conflicting requirements of exposure precision and bonding reliability.
2Volume of moving object
If the conductive adhesion layer is made thinner through electroless displacement deposition, then the bonding structure is more compact, but a thinning operation is required which reduces dielectric layer thickness
Solution Approach 1:
The raised layer is formed in advance before the final bonding operation, preparing the structure for subsequent thinning operations. This preliminary action allows the dielectric layer to be thinned controlledly while maintaining sufficient thickness, reducing manufacturing complexity despite the additional layer.
Solution Approach 2:
The conductive structure is segmented into multiple layers (conductive adhesion layer, bonding layer, and raised layer) with distinct functions. This segmentation allows each layer to be optimized independently, maintaining compactness while managing the thinning operation complexity.
3Productivity
If the dielectric layer is thinned significantly to expose the bonding layer, then bonding can proceed, but the processing window is reduced and substrate damage risk increases
Solution Approach 1:
The raised layer provides a cushioning effect by maintaining dielectric layer thickness in regions adjacent to the bonding layer. This beforehand cushioning protects the substrate from damage during thinning operations while still allowing bonding layer exposure, thus maintaining productivity without increasing substrate damage risk.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This structure allows for a larger processing window in thinning operations, reducing damage to substrates and ensuring adequate bonding strength without enlarging the size of the bonding structure, thus maintaining structural integrity and efficiency.
Implementation Method 1
a low melting point conductive layer disposed over the lower substrate
Implementation Method 2
low melting point conductive layer... bonding layer... bond the lower substrate and upper substrate
Data Source
AI summary
A bonding structure and a pre-bonding structure are provided. The bonding structure includes a lower substrate; a low melting point conductive layer disposed over the lower substrate; a high melting point conductive layer including a lower portion and an upper portion, wherein the low melting point conductive layer is between the upper portion and the lower portion of the high melting point conductive layer; a dielectric layer encapsulating the low melting point conductive layer and the high melting point conductive layer; and an upper substrate disposed on the upper portion of the high melting point conductive layer, wherein an interface between the upper substrate and the high melting point conductive layer is substantially co-level with an interface between the dielectric layer and the upper substrate.


