Hybrid Wire and Bump Bonding for High-Speed Semiconductor Packages
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Solution Overview
Problem
As semiconductor dies shrink, bond pads become closer together, leading to increased trace capacitance, signal attenuation, and parasitic effects, making high-speed operation and manufacturing difficult.
Innovation Solution
Implementing a hybrid connection between semiconductor die and substrate using both bump bonding and wire bonding to connect different sets of bond pads, increasing the pitch and reducing trace complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor dies are shrunk to increase integration density, then device functionality and integration are improved, but bond pad spacing decreases leading to increased trace capacitance and signal attenuation
Solution Approach 1:
The patent segments the bonding process into two distinct techniques: bump bonding for certain bond pads and wire bonding for others. This segmentation allows optimization of each bonding type for specific pad locations, enabling larger effective pitch for bump-bonded pads while maintaining high integration density through selective application of each bonding method across different die regions.
Solution Approach 2:
The patent applies different bonding qualities to different locations on the die. Bump bonding is used for pads where larger pitch and reduced capacitance are critical for signal integrity, while wire bonding is used for pads where space constraints are more significant. This local differentiation optimizes signal quality for high-speed pads while maintaining overall integration density.
2Productivity
If bond pads are placed closer together to increase die capacity, then device functionality is improved, but trace capacitance and parasitic effects increase making high-speed operation difficult
Solution Approach 1:
The patent segments the die into regions with different bonding characteristics. By using bump bonding for signal-critical pads, the effective pitch is increased and trace capacitance is reduced, enabling high-speed operation for those specific connections while maintaining high die capacity through overall pad density.
Solution Approach 2:
The patent changes the bonding parameter (from uniform wire bonding to hybrid bump and wire bonding) to alter the electrical characteristics of the interconnect. Bump bonding provides lower inductance and capacitance for certain connections, enabling high-speed operation while maintaining high die capacity through selective application.
3Ease of manufacture
If uniform wire bonding is used for all bond pads, then manufacturing simplicity is maintained, but signal quality deteriorates due to increased parasitic effects and trace capacitance
Solution Approach 1:
The patent segments the bonding approach into bump bonding for signal-critical pads and wire bonding for other pads. This segmentation improves signal quality for high-speed connections by reducing parasitic effects, while the hybrid approach remains manufacturable using established bump and wire bonding process technologies.
Solution Approach 2:
The patent applies different bonding qualities locally: bump bonding with its lower parasitic characteristics is applied to pads requiring high signal quality, while wire bonding is applied to pads where signal speed is less critical. This local differentiation maintains manufacturing feasibility while improving overall signal quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves signal quality, enables high-speed operations, and enhances manufacturability by reducing parasitic effects and trace capacitance.
Implementation Method 1
each die bond pad, included in the first plurality of die bond pads, is connected to a corresponding substrate bond pad, included in the first plurality of substrate bond pads, using bump bonding
Implementation Method 2
each die bond pad, included in the second plurality of die bond pads, is connected to a corresponding substrate bond pad, included in the second plurality of substrate bond pads, using wire bonding
Data Source
AI summary
Implementations described herein relate to various structures, integrated assemblies, and memory devices. In some implementations, a semiconductor package may include a substrate having a first plurality of substrate bond pads and a second plurality of substrate bond pads, and a semiconductor die having a first plurality of die bond pads and a second plurality of die bond pads. Each die bond pad, included in the first plurality of die bond pads, may be connected to a corresponding substrate bond pad, included in the first plurality of substrate bond pads, using bump bonding, and each die bond pad, included in the second plurality of die bond pads, may be connected to a corresponding substrate bond pad, included in the second plurality of substrate bond pads, using wire bonding.