Multi-Chip Package Hybrid Bonding Warpage Control
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Solution Overview
Problem
The integration of multiple semiconductor devices into a single package poses challenges in manufacturing, particularly in achieving efficient hybrid bonding and heat dissipation while minimizing warpage and redistribution layer stress, which affects the yield and performance of electronic devices.
Innovation Solution
The method involves hybrid bonding of semiconductor wafers and chips using fusion bonding and thermal treatments, along with the integration of through semiconductor vias and insulating encapsulants to form a system-on-integrated chip (SOIC) structure, which includes the use of dummy chips for heat dissipation and alignment of conductive structures for efficient electrical connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple semiconductor devices are integrated into a single package, then device functionality and performance are improved, but manufacturing complexity and warpage control become more difficult
Solution Approach 1:
The patent divides the integrated circuit into multiple separate chips (first chip, second chip, third chip, fourth chip) that are individually processed and then combined within a single package. Each chip can be manufactured and tested independently, reducing overall manufacturing complexity while maintaining multiple functions in one package.
Solution Approach 2:
The patent implements a nested structure where multiple chips are integrated within a single package substrate. The first chip contains second and third chips, which in turn contain the fourth chip, creating a hierarchical nested arrangement that enables multiple devices in one package while managing complexity through structured organization.
2Reliability
If hybrid bonding is used to integrate chips, then electrical connectivity is improved, but bonding precision and stress control become more challenging
Solution Approach 1:
The patent introduces a bonding pad structure as an intermediary element between chips. The bonding pad includes a pad electrode and surrounding protective layer that facilitates hybrid bonding by providing a controlled interface for electrical and mechanical connection, thereby improving bonding precision and reducing stress.
Solution Approach 2:
The patent performs preliminary formation of bonding pads and protective layers on each chip before the actual hybrid bonding process. This preliminary preparation ensures proper alignment and reduces stress during bonding, improving manufacturing precision while maintaining reliable electrical connectivity.
3Reliability
If through semiconductor vias are implemented, then electrical connectivity is enhanced, but manufacturing steps and stress increase
Solution Approach 1:
The patent merges the formation of through semiconductor vias with the hybrid bonding process. The vias are formed and filled with conductive material as part of the bonding pad structure, combining multiple manufacturing steps into a more integrated process that reduces overall complexity while enhancing electrical connectivity.
4Temperature
If dummy chips are added for heat dissipation, then thermal management is improved, but package complexity increases
Solution Approach 1:
The patent implements dummy chips that serve multiple functions: they provide heat dissipation through their thermal mass and conductivity, while also serving as structural fillers that maintain package integrity and enable proper spacing. This multi-functionality improves heat dissipation without proportionally increasing package complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the yield and performance by reducing warpage, improving heat dissipation, and ensuring reliable electrical connectivity within the integrated circuit, facilitating the use of the integrated circuit in various applications such as InFO and PoP packages.
Implementation Method 1
hybrid bonding of semiconductor wafers and chips using fusion bonding
Implementation Method 2
using fusion bonding and thermal treatments
Implementation Method 3
integration of through semiconductor vias and insulating encapsulants to form a system-on-integrated chip (SOIC) structure, which includes the use of dummy chips for heat dissipation
Data Source
AI summary
A package includes an integrated circuit. The integrated circuit includes a first chip, a second chip, a third chip, and a fourth chip. The second chip and the third chip are disposed side by side on the first chip. The second chip and the third chip are hybrid bonded to the first chip. The fourth chip is fusion bonded to at least one of the second chip and the third chip.