Hybrid Capacitor Double Support Pattern for DRAM Stability
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Solution Overview
Problem
In semiconductor devices, the high height of the lower electrode in DRAM capacitors leads to a leaning phenomenon, which is not adequately supported by existing designs, potentially reducing capacitance and affecting electrical characteristics.
Innovation Solution
A semiconductor device with a hybrid capacitor structure, featuring a support pattern with a double structure that includes an upper and lower pattern, where the upper pattern contacts the sidewalls of the top end portions of the lower electrodes, and the lower pattern is vertically spaced apart to support the lower portions, ensuring stability and capacitance security.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the height of the lower electrode is increased to increase capacitance in a limited area, then the capacitance is improved, but the lower electrode leans due to its high height
Solution Approach 1:
The support pattern is divided into multiple segments: a first support pattern at the lower portion of the lower electrode and a second support pattern at the upper portion. This segmentation provides distributed support along the height of the lower electrode, preventing leaning while maintaining the increased height needed for sufficient capacitance.
Solution Approach 2:
The support pattern acts as an intermediary structure between the lower electrode and the substrate. By introducing this intermediate supporting element, the lower electrode gains stability without reducing its height, thus resolving the contradiction between capacitance and stability.
2Stability of the object's composition
If a supporting pattern is added to reduce the leaning phenomenon, then the stability is improved, but the device complexity increases
Solution Approach 1:
The support pattern is formed by merging the lower electrode formation process with the support structure creation. The same conductive material and deposition techniques used for the lower electrode are utilized to form the support pattern, thereby adding stability without significantly increasing process complexity.
Solution Approach 2:
The support pattern serves multiple functions: it provides mechanical support to prevent leaning, maintains the height of the lower electrode for capacitance, and can be formed using the same materials and processes as the lower electrode itself. This multi-functionality reduces the overall complexity by eliminating the need for separate support structures.
3Quantity of substance
If the lower electrode height is increased, then the capacitance is improved, but the manufacturing precision becomes more difficult to maintain
Solution Approach 1:
The support pattern is formed preliminarily before the lower electrode is fully constructed. By establishing the support structure first, subsequent deposition and formation steps can proceed with better alignment control, maintaining manufacturing precision even as the lower electrode height increases to provide sufficient capacitance.
Data Source
AI summary
A semiconductor device includes a plurality of capacitors disposed on a substrate and a support pattern supporting upper portions and lower portions of the capacitors. Each of the capacitors includes a lower electrode, an upper electrode, and a dielectric layer between the lower and upper electrodes. The lower electrode includes a first electrode portion electrically connected to the substrate and having a solid shape and a second electrode portion stacked on the first electrode portion and having a shape comprising an opening therein. The support pattern includes an upper pattern contacting sidewalls of top end portions of the lower electrodes and a lower pattern vertically spaced apart from the upper pattern. The lower pattern contacts sidewalls under the top end portions of the lower electrodes.