Hybrid Chamber Integrating Oxide and Nitride Etching
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Solution Overview
Problem
Conventional oxide and nitride etching processes require separate apparatuses, leading to economic burden, space requirements, and operational inefficiencies.
Innovation Solution
A hybrid chamber that integrates gas phase etching (GPE) and radical dry cleaning (RDC) processes, utilizing a chamber unit with a gas supply unit and lamp unit to perform both methods in a single apparatus, featuring adjustable plasma space and heating capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate apparatuses are used for oxide etching and nitride etching, then each process can be performed with dedicated equipment, but the installation space increases and economic burden increases
Solution Approach 1:
The patent combines two separate etching apparatuses (oxide etching and nitride etching) into a single hybrid chamber. The chamber includes a gas supply unit with multiple gas inlets for different etching processes, a substrate stage, and a lamp unit, all integrated within one chamber to perform both GPE and RDC methods simultaneously or sequentially.
Solution Approach 2:
The hybrid chamber is designed as a multi-functional apparatus that can perform both gas phase etching (for oxide removal) and radical dry cleaning (for nitride removal) using the same chamber, gas supply unit, substrate stage, and lamp unit, eliminating the need for separate dedicated apparatuses.
2Reliability
If separate apparatuses are used for oxide etching and nitride etching, then each process can be performed with dedicated equipment, but the economic burden increases
Solution Approach 1:
The patent combines two separate etching apparatuses (oxide etching and nitride etching) into a single hybrid chamber. The chamber includes a gas supply unit with multiple gas inlets for different etching processes, a substrate stage, and a lamp unit, all integrated within one chamber to perform both GPE and RDC methods simultaneously or sequentially.
Solution Approach 2:
The hybrid chamber is designed as a multi-functional apparatus that can perform both gas phase etching (for oxide removal) and radical dry cleaning (for nitride removal) using the same chamber, gas supply unit, substrate stage, and lamp unit, eliminating the need for separate dedicated apparatuses.
3Reliability
If separate apparatuses are used for oxide etching and nitride etching, then each process can be performed with dedicated equipment, but the operational complexity increases
Solution Approach 1:
The patent combines two separate etching apparatuses (oxide etching and nitride etching) into a single hybrid chamber. The chamber includes a gas supply unit with multiple gas inlets for different etching processes, a substrate stage, and a lamp unit, all integrated within one chamber to perform both GPE and RDC methods simultaneously or sequentially.
Solution Approach 2:
The hybrid chamber is designed as a multi-functional apparatus that can perform both gas phase etching (for oxide removal) and radical dry cleaning (for nitride removal) using the same chamber, gas supply unit, substrate stage, and lamp unit, eliminating the need for separate dedicated apparatuses.
4Area of stationary object
If a hybrid chamber integrates both GPE and RDC processes, then installation space is reduced, but the device complexity increases
Solution Approach 1:
The gas supply unit is divided into multiple independent gas inlets (first gas inlet for GPE, second gas inlet for RDC) that can be controlled separately. The chamber includes a substrate stage, lamp unit, and gas supply unit as distinct modular components, allowing independent operation of each etching process while maintaining a compact integrated structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Reduces installation space, operational burden, and economic costs by combining oxide and nitride etching processes, enhancing efficiency and flexibility in substrate processing.
Implementation Method 1
heats by-products using a lamp or the like to remove the by-products
Implementation Method 2
it is performed by a radical dry cleaning (RDC) method that provides plasma using fluorine-based gas, such as CH2F2, CF4, NF3, and the like to perform etching
Data Source
AI summary
The present invention relates to a hybrid chamber, and more specifically, to a hybrid chamber capable of performing both a gas phase etching (GPE) process for removing oxide from a substrate and a radical dry cleaning (RDC) process for removing nitride from the substrate in one chamber.


