Hybrid Contact Plug Liner for Lower Resistivity and Capacitance
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Solution Overview
Problem
The scaling down of semiconductor devices has increased the complexity of manufacturing processes, leading to challenges in reducing resistivity and capacitance in nitride-based spacer materials used to prevent sidewall oxide damage.
Innovation Solution
A hybrid liner structure is introduced, comprising a lower nitride portion and an upper oxidized nitride portion, which surrounds the conductive pillar and reduces dielectric constant, thereby decreasing resistivity and capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If nitride-based spacer materials are used to prevent sidewall oxide damage, then sidewall protection is improved, but resistivity and capacitance increase
Solution Approach 1:
The liner is divided into two distinct portions: a lower nitride portion and an upper oxidized nitride portion. Each portion serves different functions - the nitride portion provides sidewall protection while the oxidized nitride portion reduces resistivity and capacitance. This segmentation allows optimization of each portion's properties independently to resolve the contradiction.
Solution Approach 2:
Different portions of the liner have different material compositions and properties. The lower portion uses nitride material for protection, while the upper portion uses oxidized nitride for electrical performance. This local differentiation of material quality allows simultaneous achievement of sidewall protection and reduced resistivity/capacitance.
2Speed
If device dimensions are scaled down, then processing speed and performance are improved, but manufacturing complexity increases
Solution Approach 1:
The manufacturing process is segmented into distinct steps for forming the lower nitride portion and upper oxidized nitride portion separately. This segmentation allows each portion to be optimized and controlled independently, managing the complexity of manufacturing scaled-down devices with enhanced performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hybrid liner structure effectively reduces resistivity and capacitance, enhancing the performance of semiconductor devices by improving carrier mobility and device performance.
Implementation Method 1
an upper portion abutting the conductive pillar and having an oxidized nitride material... which surrounds the conductive pillar and reduces dielectric constant, thereby decreasing resistivity and capacitance
Data Source
AI summary
A semiconductor structure and method of manufacturing a semiconductor structure are provided. The semiconductor structure includes a substrate and at least one contact plug. The substrate has an epi-layer. The contact plug is formed on the epi-layer and includes a silicide cap disposed on the epi-layer; a conductive pillar disposed on the silicide cap such that the conductive pillar electrically connects to the epi-layer via the silicide cap; and a hybrid liner. The hybrid liner surrounds the conductive pillar and includes a lower portion abutting the silicide cap and having a nitride material and an upper portion abutting the conductive pillar and having an oxidized nitride material. Due to the hybrid liner, a semiconductor structure with increased capacitance and decreased resistivity can be obtained.