Hybrid Die Bonding Structure for Stronger Stacked Semiconductor Dies
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Solution Overview
Problem
Current semiconductor die bonding structures face challenges in achieving enhanced bonding force and stability, particularly in broadband and high-capacity electronic products, where existing methods may not adequately ensure strong and reliable connections between semiconductor dies.
Innovation Solution
The proposed semiconductor die bonding structure incorporates a hybrid bonding method with specifically designed lower and upper connection structures, including through-via structures and bonding pad structures, where the lower top bonding dielectric layer and upper bottom bonding dielectric layer are directly bonded, and the connection structures are aligned and bonded to enhance electrical connectivity and mechanical stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If conventional die bonding methods are used, then the bonding process is simple, but the bonding force and stability are insufficient
Solution Approach 1:
The bonding pad structure is segmented into multiple functional layers including a base layer, intermediate layer, and top layer with different materials and properties. Each layer serves a specific function in enhancing bonding performance, allowing the complex bonding requirements to be met through modular structural design
Solution Approach 2:
The bonding pad employs composite material construction with multiple layers of different materials (e.g., copper, tungsten, barrier layers, dielectric materials) stacked together. This composite structure combines the advantages of different materials to achieve both strong bonding force and electrical functionality while managing stress and thermal expansion
2Reliability
If the bonding pad area is increased to enhance bonding force, then the bonding stability improves, but the device area occupation increases
Solution Approach 1:
The bonding pad structure implements local quality enhancement by concentrating material properties and structural features at critical bonding regions. The multi-layer construction provides localized stress distribution and enhanced adhesion precisely where needed, achieving high bonding reliability without requiring uniform expansion of the entire pad area
3Productivity
If direct bonding of dielectric layers is implemented, then the bonding process is simplified and productivity is improved, but precise alignment is required
Solution Approach 1:
The bonding pad structure incorporates preliminary alignment features and pre-configured multi-layer patterns that guide the alignment process before actual bonding occurs. The structured layers and patterns are prepared in advance to facilitate precise registration, reducing the alignment burden during the bonding step itself
Data Source
AI summary
A semiconductor die bonding structure includes a lower die including a lower top bonding dielectric layer and a lower connection structure and an upper die stacked over the lower die and including an upper bottom bonding dielectric layer and an upper connection structure. The lower top bonding dielectric layer and the upper bottom bonding dielectric layer are connected. The lower connection structure and the upper connection structure are connected.