Hybrid Semiconductor Display Structure for Oxide-Channel Leakage Control

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Solution Overview

Problem

OLED display devices using oxide semiconductors are prone to leakage currents due to external light exposure in bottom gate structures, which affects performance and increases manufacturing complexity.

Innovation Solution

A display device design with a first transistor using polycrystalline semiconductors and a second transistor using oxide semiconductors, incorporating an external light blocking member to minimize leakage currents, and a mesh structure for driving voltage lines to enhance resolution and reduce power consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a bottom gate structure using oxide semiconductor is used, then manufacturing cost is reduced and uniformity is improved, but leakage current increases due to external light exposure

Engineering Contradiction:
Improvemanufacturing costVSAvoidleakage current
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

An external light blocking member is introduced as an intermediary element between the external environment and the oxide semiconductor channel. This member blocks external light from reaching the oxide semiconductor, thereby preventing photo-induced leakage current while allowing the bottom gate structure to maintain its manufacturing advantages

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The light blocking member is positioned specifically at the region where external light would otherwise reach the oxide semiconductor channel. This localized protection addresses the leakage issue without affecting the overall device structure or manufacturing process

Inventive Principle:
Principle #3Local quality

2Reliability

If oxide semiconductor is used in bottom gate structure, then carrier mobility and on/off ratio are improved, but device complexity increases due to light blocking requirements

Engineering Contradiction:
Improvecarrier mobilityVSAvoiddevice structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The external light blocking member is merged with existing device structures such as the pixel electrode or common electrode. This integration approach provides light blocking functionality while utilizing already-present structural elements, thereby minimizing the increase in device complexity

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Minimizes leakage currents and reduces power consumption while maintaining high resolution and display quality by utilizing a polycrystalline and oxide semiconductor structure with an external light blocking member and optimized voltage line layout.

Implementation Method 1

an external light blocking member positioned on the second source electrode and the second drain electrode and overlapping the second channel

Methodology Applied
Scientific EffectLight blocking: Absorption (EM radiation)

Implementation Method 2

Electrons injected from a cathode that is an electrode and holes injected from an anode that is another electrode are bonded to each other in the organic light emitting layer to form excitons. Light is emitted while the excitons discharge energy.

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentUS12464906B2Display device
Publication Date: 2025.11.04 SAMSUNG DISPLAY CO LTD
  • US12464906B2 patent drawing
  • US12464906B2 patent drawing
  • US12464906B2 patent drawing

AI summary

A display device includes a substrate, first and second transistors on the substrate, a first electrode connected to one of the first and second transistors, a second electrode facing the first electrode, and a light emission member between the first and second electrodes, where the first transistor includes a first channel including a polycrystalline semiconductor member on the substrate, a first source electrode and a first drain electrode at respective opposite sides of the first channel, a first gate electrode overlapping the first channel, and a first insulating layer covering the first gate electrode, the second transistor includes a second gate electrode on the first insulating layer, a second channel including an oxide semiconductor member on the second gate electrode, second source and drain electrodes on the second channel, and an external light blocking member on the second source and drain electrodes and overlapping the second channel.