Hybrid Display Panel Layout for High-Voltage OLED Pixel Driving
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Solution Overview
Problem
High-resolution OLED displays face issues such as parasitic effects, latch-up effects, and high power consumption due to sub-micron transistors, which are exacerbated by high driving voltages and leakage currents, particularly in CMOS ICs, and existing solutions face challenges in alignment and integration.
Innovation Solution
A display panel with a single-crystal silicon substrate divided into regions, incorporating c-Si transistors for signal processing and control circuits and compound semiconductor TFTs for pixel arrays, allowing separate voltage operation to avoid parasitic effects and enable high speed, low power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If sub-micron transistors are used in high-resolution OLED displays, then display resolution is improved, but parasitic effects and latch-up effects increase
Solution Approach 1:
The substrate is divided into a first region for low-voltage CMOS circuits and a second region for high-voltage pixel circuits, physically separating circuits with different voltage requirements to prevent parasitic effects from affecting high-resolution display performance
Solution Approach 2:
Different regions of the substrate are assigned different semiconductor material properties: the first region uses CMOS technology for low-voltage operation while the second region uses TFT technology for high-voltage operation, allowing each region to be optimized for its specific function
2Illumination intensity
If high driving voltage is applied to OLED film, then light output is improved, but power consumption and leakage current increase
Solution Approach 1:
The display panel is segmented into different voltage domains: high-voltage pixel circuits directly drive the OLED for high light output, while low-voltage CMOS circuits handle signal processing and control, separating the high-power functions from low-power functions
Solution Approach 2:
The invention changes the voltage parameter locally across different regions of the substrate, allowing high voltage (5V or higher) in the pixel circuit region for maximum light output while maintaining low voltage in the CMOS region for minimal power consumption
3Measurement precision
If sub-micron transistors are used, then display resolution is improved, but transistor driving voltage requirements conflict with OLED driving voltage requirements
Solution Approach 1:
The substrate is segmented into voltage-isolated regions that can operate at different voltage levels simultaneously, allowing sub-micron CMOS transistors to operate at low voltage while TFT pixel circuits operate at high voltage to drive the OLED
Solution Approach 2:
The substrate structure and insulation layers act as intermediaries that electrically isolate the low-voltage CMOS region from the high-voltage TFT region, enabling voltage incompatibility to be resolved through physical separation and controlled interfaces
Data Source
AI summary
Provided is a display panel fabricated with a hybrid semiconductor circuit in a substrate, including a c-Si circuits and a compound semiconductor circuit arranged in separate regions on the substrate. Row scanning circuits of the display panel are fabricated with the c-Si transistors and pixel array of the display panel is fabricated with the compound semiconductor transistors. This arrangement allows low voltage driven CMOS circuit and high voltage driven pixel circuits being integrated together in one substrate.