Hybrid Double-Gate Driver Circuit for Stable Display Gate Signals
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Solution Overview
Problem
Existing display apparatuses face challenges in stably outputting gate signals due to the limitations in the design and connectivity of transistors within the gate driving circuit, which affects the reliability and efficiency of the display.
Innovation Solution
The display apparatus incorporates a gate driving circuit with a combination of peripheral oxide transistors and silicon transistors, featuring double-gate structures for improved electron mobility and connectivity through connection electrodes, and a pixel circuit with main oxide and silicon transistors to enhance signal stability and control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional single-gate transistor structure is used in the gate driving circuit, then the device complexity is reduced, but the electron mobility and signal stability deteriorate
Solution Approach 1:
The patent transitions from a conventional single-gate structure to a double-gate structure by adding a second gate electrode in the vertical dimension. This dimensional change allows simultaneous control of the channel from both above and below, improving electron mobility and signal stability without significantly increasing lateral device footprint
Solution Approach 2:
The patent employs a hybrid transistor design combining oxide semiconductor material (for low off-state current and stability) and silicon semiconductor material (for high electron mobility) in the same gate driving circuit. This composite approach leverages the complementary strengths of both materials to achieve stable gate signal output
2Loss of energy
If oxide semiconductor transistors are used exclusively in the gate driving circuit, then the off-state current is reduced, but the electron mobility and switching speed deteriorate
Solution Approach 1:
The patent applies different semiconductor materials to different functional requirements within the gate driving circuit. Oxide semiconductor transistors are used where low off-state current is critical, while silicon semiconductor transistors are deployed where high electron mobility and fast switching are needed. This localized material selection optimizes overall circuit performance
Solution Approach 2:
The gate driving circuit implements a hybrid architecture combining oxide semiconductor and silicon semiconductor transistors. The oxide transistors provide stable threshold voltage and low leakage, while silicon transistors deliver high-speed switching, creating a complementary system that overcomes the limitations of using either material alone
3Reliability
If the upper gate and lower gate are not electrically connected, then the manufacturing process is simplified, but the transistor performance and signal stability deteriorate
Solution Approach 1:
The patent electrically connects the upper gate electrode and lower gate electrode through a conductive structure, merging them into a unified dual-gate system. This connection allows the gates to function together as a single control unit, improving transistor performance and signal stability while the integration is achieved through standard semiconductor manufacturing techniques
Data Source
AI summary
A display apparatus includes: a substrate comprising a display region and a non-display region surrounding the display region; and a gate driving circuit in the non-display region of the substrate and comprising a plurality of stages, wherein each of the plurality of stages comprises a peripheral oxide transistor, comprising a first semiconductor layer comprising an oxide semiconductor, and a peripheral silicon transistor, comprising a second semiconductor layer comprising a silicon semiconductor, the peripheral oxide transistor further comprises a first lower gate electrode under the first semiconductor layer and a first upper gate electrode above the first semiconductor layer, and the first lower gate electrode and the first upper gate electrode are electrically connected to each other.