Hybrid Double Quantum Disk Spin State Manipulation
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Solution Overview
Problem
Current semiconductor technologies face limitations in increasing device capacity due to heat generation and interference issues at small circuit line widths, making it difficult to further integrate devices, and binary bit techniques are insufficient for higher capacity processing.
Innovation Solution
A hybrid double quantum disk structure composed of a diluted magnetic semiconductor (DMS) and a ferroelectric compound semiconductor (FES) is used, where the dipole polarization of the FES is switched to manipulate the spin-up and spin-down states of carriers, allowing for efficient spin state control in a nanoscale quantum structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If device integration continues to increase, then device capacity improves, but heat generation and interference increase causing devices to malfunction
Solution Approach 1:
The patent replaces conventional charge-based binary bit operations with spin-based quantum state manipulation. By using spin-up and spin-down states instead of charge accumulation, the system avoids heat generation from charge tunneling and leakage currents, enabling higher integration without the harmful thermal effects that limit current semiconductor scaling
Solution Approach 2:
The patent changes the fundamental operating parameter from charge state to spin quantum state. By manipulating spin states through dipole polarization switching in a hybrid DMS/FES quantum disk structure, the system achieves nonvolatile memory operation with reduced power consumption and eliminated heat generation issues associated with continuous charge maintenance in densely integrated circuits
2Area of stationary object
If circuit line width is decreased to increase integration, then device density improves, but tunneling interference and leakage current increase causing device failure
Solution Approach 1:
The patent substitutes charge-based memory operation with spin-based quantum state storage. Since spin states are maintained through quantum coherence rather than charge confinement, the system eliminates sensitivity to tunneling interference and leakage current that plague sub-16nm conventional transistors, enabling reliable operation at much smaller dimensions
Solution Approach 2:
The patent employs a hybrid structure combining diluted magnetic semiconductor (DMS) and ferroelectric semiconductor (FES) materials in a quantum disk configuration. This composite material system provides both spin manipulation capability through DMS and nonvolatile memory function through FES dipole polarization, achieving reliable spin state storage without the dimensional limitations of conventional semiconductor materials
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise manipulation and separation of spin quantum states, overcoming the limitations of binary bit integration and enabling higher device capacity by effectively transferring and combining spin states between DMS and FES disks, suitable for advanced spintronic devices.
Implementation Method 1
the dipole polarization of the FES is switched to manipulate the spin-up and spin-down states of carriers
Implementation Method 2
manipulating a spin state in a quantum structure on the nanometer scale
Data Source
AI summary
Disclosed herein is a structure and method for manipulating a spin state, regarded as important in the field of spintronics, by which the distribution of spin-up and spin-down states of carriers in a hybrid double quantum disk structure, composed of a diluted magnetic semiconductor and a ferroelectric compound semiconductor, is manipulated through dipole polarization switching of the ferroelectric compound semiconductor without a change in bias. Giant Zeeman splitting properties of the diluted magnetic semiconductor and polarization properties of the ferroelectric compound semiconductor are applied in conjunction with the Pauli exclusion principle, thus enabling the combination or separation of carriers in spin-up and spin-down states in the hybrid double quantum disk structure. The spin relaxation time in the structure is on the order of microseconds, during which the spin state is well-defined, and therefore, the structure can be applied to microprocessors having gigahertz clock speeds.