Hybrid FinFET Structure for Epitaxial Film Quality
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Solution Overview
Problem
Conventional FinFET devices face challenges in metal contact landing and lower linear-region drain current due to lower epitaxial film growth performance, resulting in higher junction resistance and reduced reliability.
Innovation Solution
The implementation of a hybrid FinFET structure with a first active area for non-planar FinFET devices and a second active area for planar FinFET devices, where silicon epitaxial growth film quality is improved in the planar region, increasing the landing window for metal contact landing and reducing resistance, thereby enhancing device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional FinFET structure is used, then device density is improved, but epitaxial film growth performance deteriorates leading to higher junction resistance
Solution Approach 1:
The semiconductor device is divided into multiple active areas with different FinFET structures. First active areas contain conventional non-planar FinFETs for high density, while second active areas contain planar FinFETs with improved epitaxial growth. This segmentation allows each region to be optimized for its specific function, resolving the contradiction between density and film quality.
Solution Approach 2:
Different regions of the device are given different structural qualities. The non-planar regions provide high density where needed, while planar regions provide superior epitaxial growth characteristics. Each local area has the specific structure required for its operational requirements, allowing simultaneous optimization of both density and film quality in different locations.
2Productivity
If non-planar FinFET structure is used, then device density is improved, but metal contact landing becomes difficult
Solution Approach 1:
The device structure is segmented into first active areas with non-planar fins for high density and second active areas with planar fins for easier manufacturing. The planar regions provide flat surfaces that facilitate metal contact deposition and alignment, while non-planar regions maintain high packing density where contact requirements are less critical.
Solution Approach 2:
Planar FinFET structures are strategically placed in regions where metal contact landing is critical, providing locally optimized manufacturing ease. Non-planar structures are used in regions where density is the primary concern. This local differentiation resolves the contradiction by providing the appropriate structure in each specific location.
3Reliability
If planar FinFET structure is used, then epitaxial film growth performance is improved, but device density decreases
Solution Approach 1:
The semiconductor device partitions planar FinFET structures into specific second active areas where superior epitaxial growth is required, while non-planar FinFETs occupy first active areas for maximum density. This spatial segmentation allows the device to achieve both high overall density and localized regions of excellent film quality.
Solution Approach 2:
Planar structures with their superior epitaxial growth characteristics are applied locally in regions requiring high film quality, while non-planar structures provide density in other regions. This local quality differentiation allows the device to optimize both density and film quality without requiring a uniform structure throughout.
4Ease of manufacture
If uniform FinFET structure is used across all active areas, then manufacturing process simplicity is maintained, but device performance for specific electrical requirements deteriorates
Solution Approach 1:
The device is segmented into first and second active areas with different FinFET structures optimized for specific electrical requirements. While this increases structural complexity, the segmentation is implemented in a systematic way that maintains manufacturing feasibility. Each segment can be processed with appropriate parameters, balancing performance optimization with manufacturing practicality.
Solution Approach 2:
Different active areas are given different structural qualities to meet specific electrical performance requirements. Non-planar regions optimize for density and certain electrical characteristics, while planar regions optimize for epitaxial growth and other electrical properties. This local customization of structure allows the device to achieve superior overall performance while maintaining reasonable manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a 76% gain in Idlin performance and improved yield and reliability by reducing Rsd resistance through better epitaxial film growth and optimized transistor structure for specific electrical requirements.
Implementation Method 1
an epitaxial layer of semiconductor material formed on the fins and on the substantially planar fin
Data Source
AI summary
A semiconductor device includes a first fin field effect transistor (FinFET) device, the first FinFET device including a plurality of fins formed in a substrate, an epitaxial layer of semiconductor material formed on the fins forming non-planar source/drain regions, and a first gate structure traversing across the plurality of fins. The semiconductor device includes a second FinFET device, the second FinFET device including a substantially planar fin formed in the substrate, an epitaxial layer of the semiconductor material formed on the substantially planar fin and forming substantially planar source/drain regions, and a second gate structure traversing across the substantially planar fin.