Hybrid Fin Gate Layout Tuning for Single- and Multi-Fin DIBL
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Solution Overview
Problem
Hybrid fin devices face challenges in optimizing performance, density, efficiency, and fabrication costs due to differences in electrical characteristics between single-fin and multi-fin transistors, exacerbated by drain-induced barrier lowering (DIBL) as IC technology nodes shrink.
Innovation Solution
Adjusting the width of gates in hybrid fin devices using optical proximity correction (OPC) to reduce differences in electrical characteristics, such as DIBL, by enlarging or reducing gate widths to achieve uniform electrical performance across single-fin and multi-fin transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If gate width is increased to improve electrical performance of single-fin devices, then electrical characteristics improve, but device density and area utilization deteriorate
Solution Approach 1:
The patent applies different gate widths to different device types within the same hybrid fin device. Specifically, single-fin devices have a first gate width while multi-fin devices have a second gate width, allowing each device type to be optimized for its electrical characteristics while maintaining overall device density
Solution Approach 2:
The gate structure is segmented into different width portions corresponding to different device regions. The gate comprises a first portion with a first width for single-fin devices and a second portion with a second width for multi-fin devices, enabling independent optimization of each segment's electrical performance
2Area of stationary object
If gate width is decreased to improve device density, then area utilization improves, but electrical performance and control over DIBL deteriorate
Solution Approach 1:
Different gate widths are assigned to different device types based on their specific electrical performance requirements. Multi-fin devices receive a narrower gate width to maximize density, while single-fin devices receive a wider gate width to ensure adequate electrical control and compensate for their smaller size
Solution Approach 2:
The gate width parameter is varied across different device regions within the hybrid fin device. By changing the gate width parameter from a first width for single-fin devices to a second width for multi-fin devices, the patent optimizes both electrical characteristics and device density simultaneously
3Ease of manufacture
If uniform gate width is used across all devices, then manufacturing simplicity is maintained, but electrical characteristic uniformity across different fin configurations deteriorates
Solution Approach 1:
The patent implements local quality by assigning different gate widths to different device types (single-fin vs. multi-fin) within the hybrid fin device. This allows each device type to have optimized electrical characteristics while still being manufactured using the same hybrid fin device structure and process flow
Solution Approach 2:
The gate structure incorporates dynamic variability in its width parameter across different device regions. The gate comprises a first portion with a first width and a second portion with a second width, allowing the structure to adapt to different device requirements while maintaining a unified manufacturing approach
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution minimizes electrical characteristic differences between single-fin and multi-fin devices, enhancing overall performance and integration into existing IC manufacturing processes with minimal disruption.
Implementation Method 1
Adjusting the width of gates in hybrid fin devices using optical proximity correction (OPC) to reduce differences in electrical characteristics
Data Source
AI summary
An exemplary method includes receiving a hybrid fin device layout for a hybrid fin device that includes a gate disposed over a single-fin active region and a multi-fin active region. The single-fin active region and the multi-fin active region extend lengthwise along a first direction. The gate extends lengthwise along a second direction, the second direction is different than the first direction, and the gate has a width along the first direction. The single-fin active region and a first portion of the gate form a first fin-based device having a first electrical characteristic. The multi-fin active region and a second portion of the gate form a second fin-based device having a second electrical characteristic that is different than the first electrical characteristic. The method further includes tuning the width of the gate to reduce a difference between the first electrical characteristic and the second electrical characteristic.