Hybrid Flash FRAM Memory for Fast Boot and Wear Reduction

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Solution Overview

Problem

Conventional flash memory devices face limitations in random access during booting operations, leading to slow data writing and reading speeds due to the need for data copying and erasure processes, which also affect the lifespan of NAND flash memory sectors.

Innovation Solution

Integration of a non-volatile memory device, such as FRAM, MRAM, or PRAM, as a read/write buffer within the flash memory device to support random access and manage wear leveling and garbage collection functions, allowing for faster data access and reduced booting times.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If NAND flash memory is used for storage, then high capacity and low cost are achieved, but random access is not supported and data writing speed is slow

Engineering Contradiction:

Improvestorage capacityVSAvoiddata writing speed

Core Design Contradiction:

Quantity of substanceVSProductivity

Solution Approach 1:

The storage system is divided into two distinct memory types: NAND flash memory for high-capacity storage and FRAM for high-speed random access. Each memory type is optimized for specific functions, allowing the system to achieve both high capacity and fast random access capabilities that neither memory could provide alone.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The hybrid memory system combines the advantages of both NAND flash memory (high capacity, low cost) and FRAM (fast random access, non-volatile) to create a universal storage solution that can handle both bulk data storage and rapid random access operations, eliminating the need for external DRAM for boot operations.

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Reliability

If data is written to NAND flash memory, then storage is achieved, but the process requires erasing previous data and takes a long time

Engineering Contradiction:

Improvedata storageVSAvoiddata writing time

Core Design Contradiction:

ReliabilityVSLoss of time

Solution Approach 1:

FRAM is used to store boot-related data and metadata in advance, allowing the system to perform rapid random access during boot operations without needing to first erase and write to NAND flash memory. This preliminary storage in FRAM eliminates the time-consuming erase-then-write sequence required by NAND flash for boot operations.

Inventive Principle:

Principle #10Preliminary action

3Ease of operation

If boot operations are performed on conventional flash memory, then system startup is achieved, but data copying and erasure processes are required which slows down access speed

Engineering Contradiction:

Improvebooting operationVSAvoiddata access speed

Core Design Contradiction:

Ease of operationVSSpeed

Solution Approach 1:

FRAM serves as an intermediary memory layer between the CPU and NAND flash memory during boot operations. It provides a fast random access interface for boot-related data while the actual bulk storage remains in NAND flash memory, eliminating the need for slow sequential data copying during boot.

Inventive Principle:

Principle #24Intermediary (Mediator)

4Productivity

If NAND flash memory sectors are accessed repeatedly, then data reading is achieved, but the lifespan of the sectors is reduced due to limited write/erase cycles

Engineering Contradiction:

Improvedata reading speedVSAvoidmemory lifespan

Core Design Contradiction:

ProductivityVSDuration of action of stationary object

Solution Approach 1:

Different memory types are assigned to different functional requirements: FRAM handles high-access-frequency boot-related data that requires rapid random access, while NAND flash memory stores bulk data with lower access frequency. This local differentiation of memory quality reduces wear on NAND flash sectors through less frequent erase cycles.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The system discards the limitation of NAND flash's limited write/erase cycles by using FRAM for frequently accessed boot data. FRAM's non-volatile nature allows it to retain data indefinitely without wear, effectively recovering the functionality that NAND flash lacks in terms of cycle durability.

Inventive Principle:

Principle #34Discarding and recovering

Data Source

PatentUS8467244B2Multi-chip semiconductor devices having non-volatile memory devices therein

Publication Date: 2013.06.18 SAMSUNG ELECTRONICS CO LTD

AI summary

A flash memory device and a flash memory system are disclosed. The flash memory device includes a first non-volatile memory including a plurality of page data cells, storing page data, and reading and outputting the stored page data when a read command is applied from an external portion; and a second non-volatile memory including a plurality of spare data cells respectively adjacent to the plurality of page data cells, storing spare data, scanning the spare data and temporarily storing corresponding information when a file system is mounted, reading and outputting the stored spare data when the read command is applied.