Hybrid-Height Semiconductor Electrodes With Straight Sidewalls
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Solution Overview
Problem
Existing methods for forming semiconductor electrodes, particularly for electron beam steering devices, result in nonuniform and jagged sidewalls due to multi-PR patterning and metal electroplating processes, leading to interference between electron beams and reduced controllability.
Innovation Solution
A method involving the use of patternable hard mask layers and multiple electroplating processes to form hybrid height electrodes with straight sidewalls and flat top surfaces, utilizing a dual-Damascene process to achieve high aspect ratio electrodes with consistent profiles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multi-PR patterning and metal electroplating processes are used to form semiconductor electrodes, then electrodes can be formed with varying heights, but the sidewalls become nonuniform and jagged, leading to interference between electron beams
Solution Approach 1:
The electrode formation process is segmented into multiple discrete electroplating steps, each forming a portion of the final electrode structure. Hard mask layers are selectively removed between electroplating steps to create cavities that define the height and shape of different electrode portions, enabling precise control over electrode profiles while maintaining smooth sidewalls.
Solution Approach 2:
Hard mask layers are deposited and patterned in advance to define the geometry of electrodes before electroplating occurs. The hard mask structure serves as a preliminary template that guides the electroplating process, ensuring that metal deposits form with smooth, uniform sidewalls rather than jagged surfaces.
2Adaptability or versatility
If multi-PR patterning and metal electroplating processes are used to form semiconductor electrodes, then electrodes can be formed with varying heights, but controllability of electron beam steering is reduced
Solution Approach 1:
The electrode structure is segmented into multiple portions with different heights, each formed by controlled electroplating steps. This segmentation allows precise control over the electric field distribution, enabling independent optimization of electron beam steering characteristics for different beam energies or angles.
Solution Approach 2:
Different portions of the electrode structure are given different local qualities through varying heights and shapes. The hard mask patternning creates regions with specific geometric properties that tailor the local electric field characteristics, allowing optimized control for different electron beam conditions throughout the device.
3Manufacturing precision
If dual-Damascene process with multiple electroplating steps is used to form high aspect ratio electrodes, then electrode uniformity and sidewall straightness are improved, but manufacturing process complexity increases
Solution Approach 1:
The complex electrode formation is segmented into repeatable units of hard mask deposition, patternning, and electroplating. Each unit produces a consistent electrode portion, and the process can be iterated to build up high aspect ratio structures with uniform profiles, making the complexity manageable through modular repetition.
Solution Approach 2:
Hard mask layers serve as intermediary structures that mediate between the patterning step and the electroplating step. These temporary structures define the electrode geometry during formation and are removed after serving their purpose, enabling precise control over electrode profiles without requiring direct patterning of the metal itself.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method improves electrode uniformity and reduces interference between electron beams, enhancing the controllability and performance of electron beam steering devices.
Implementation Method 1
filling the first cavity and the second cavity with an electrically conductive material to form a first electrically conductive pillar and a second electrically conductive pillar
Data Source
AI summary
Forming an electrode structure includes forming a first cavity and a second cavity in a first hard mask layer, filling the first cavity and the second cavity with an electrically conductive material to form a first electrically conductive pillar and a second electrically conductive pillar; and planarizing exposed surfaces of the first and second electrically conductive pillars. Thereafter, a second hard mask layer is disposed on the first hard mask layer, a third cavity is formed passing through the second hard mask layer, and a second electroplating and planarization process fills the third cavity with the electrically conductive material to form a third electrically conductive pillar contacting the second electrically conductive pillar. A first electrode comprises the first electrically conductive pillar, and a second electrode comprises a combination of the second and third electrically conductive pillars.