Hybrid IC Die Stacking With Through Vias for GaN-Silicon Integration
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Solution Overview
Problem
As semiconductor devices continue to shrink in size for increased integration density, challenges arise in integrating high-frequency Group III-V semiconductor devices with low-frequency Group IV semiconductor devices without compromising performance and increasing manufacturing complexity.
Innovation Solution
The formation of hybrid integrated circuit dies that interconnect Group III-V and Group IV semiconductor devices through die-level features, utilizing through-substrate vias and dielectric isolation to reduce noise and simplify integration, while avoiding packaging-level interconnects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If Group III-V and Group IV semiconductor devices are integrated on the same die, then functional versatility is improved, but manufacturing complexity increases
Solution Approach 1:
The patent divides the semiconductor die into distinct first and second device regions, where the first region contains Group III-V devices and the second region contains Group IV devices. This segmentation allows each region to be optimized for its specific device type while maintaining overall integration on a single die, thereby achieving functional versatility without excessive manufacturing complexity.
Solution Approach 2:
The patent applies different dielectric materials to different regions of the substrate: a first dielectric material in the first device region and a second dielectric material in the second device region. This local quality approach allows each region to have dielectric properties optimized for its specific device type, enabling diverse device integration while managing manufacturing complexity through region-specific optimization.
2Quantity of substance
If minimum feature size is reduced to increase integration density, then integration density is improved, but manufacturing precision requirements worsen
Solution Approach 1:
The patent utilizes vertical stacking with through-substrate vias to connect devices across multiple layers and regions. This three-dimensional integration approach increases the effective component capacity without proportionally reducing the minimum feature size in the planar dimension, thereby improving integration density while maintaining manageable manufacturing precision requirements.
Data Source
AI summary
In an embodiment, a device includes: a gallium nitride device on a substrate, the gallium nitride device including an electrode; a dielectric layer on and around the gallium nitride device; an isolation layer on the dielectric layer; a semiconductor layer on the isolation layer, the semiconductor layer including a silicon device; a through via extending through the semiconductor layer, the isolation layer, and the dielectric layer, the through via electrically and physically coupled to the electrode of the gallium nitride device; and an interconnect structure on the semiconductor layer, the interconnect structure including metallization patterns electrically coupled to the through via and the silicon device.