Hybrid Inverter Gate Control for Synchronized Multi-Phase Switching

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Solution Overview

Problem

Existing multi-phase power inverters for electric machines face challenges in synchronizing the switching events of semiconductor switches with different technologies, leading to issues such as overcurrent, overvoltage, and electromagnetic interference, which affect the efficiency and reliability of power conversion.

Innovation Solution

A gate drive system with a gate controller and gate drive circuits controls semiconductor switches in parallel or series, using different slew rates and synchronization to manage the switching delays of hybrid switch power modules, ensuring equivalent current conduction during ON/OFF transients and providing overcurrent and overvoltage protection.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If semiconductor switches with different technologies are used in parallel or series, then the power conversion capability and efficiency are improved, but the synchronization of switching events becomes difficult leading to overcurrent, overvoltage, and electromagnetic interference

Engineering Contradiction:
Improvepower conversion efficiencyVSAvoidswitching synchronization
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent applies parameter changes by dynamically adjusting the gate voltage slew rate for different semiconductor switches based on their individual characteristics. The controller monitors switching events and modifies gate voltage parameters in real-time to achieve synchronized switching across hybrid switches with different technologies, thereby maintaining reliability while preserving power conversion efficiency.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent implements feedback mechanisms where the controller continuously monitors switching events, current, and voltage states of semiconductor switches. Based on this feedback, the controller adjusts gate drive signals to synchronize switching transitions, preventing overcurrent and overvoltage conditions while maintaining the benefits of using diverse semiconductor technologies.

Inventive Principle:
Principle #23Feedback

2Productivity

If the switching speed is increased to improve power conversion speed, then the productivity is improved, but the second-order effects such as overvoltage spikes and electromagnetic interference increase

Engineering Contradiction:
Improveswitching speedVSAvoidelectromagnetic interference
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

The patent applies dynamics by making the gate voltage slew rate adjustable rather than fixed. The controller dynamically selects appropriate slew rates based on operating conditions, allowing fast switching when needed while reducing electromagnetic interference when lower speeds are acceptable. This dynamic adjustment optimizes the trade-off between productivity and harmful effects.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes the gate voltage parameter (slew rate) to control the rate of change during switching transitions. By adjusting this parameter, the system achieves fast switching for high productivity while minimizing overvoltage spikes and electromagnetic interference, effectively resolving the contradiction between speed and harmful effects.

Inventive Principle:
Principle #35Parameter changes

3Power

If the gate voltage is increased to ensure full conduction of semiconductor switches, then the power conversion capability is improved, but the risk of overvoltage and device stress increases

Engineering Contradiction:
Improvepower conversion capabilityVSAvoidovervoltage stress
Core Design Contradiction:
PowerVSObject-affected harmful factors

Solution Approach 1:

The patent applies parameter changes by using adjustable gate voltage levels and slew rates tailored to each semiconductor switch's characteristics. This ensures sufficient gate voltage for full conduction and optimal power conversion capability while controlling the rate of voltage change to minimize overvoltage spikes and reduce device stress.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies local quality by providing individualized gate drive parameters for each semiconductor switch based on its specific characteristics. This localized approach ensures each switch receives the appropriate gate voltage and slew rate needed for full conduction without excessive overvoltage stress, optimizing power capability while protecting devices.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS20250323592A1System and method for controlling a multi-phase power inverter of an electric machine
Publication Date: 2025.10.16 GM GLOBAL TECHNOLOGY OPERATIONS LLC
  • US20250323592A1 patent drawing
  • US20250323592A1 patent drawing
  • US20250323592A1 patent drawing

AI summary

A multi-phase power inverter coupled to an electric machine includes a gate drive system including a gate controller operatively connected to gate drive circuits and hybrid switch power modules. The hybrid switch power modules are integrated into phase legs of the inverter that couple to the electric machine via AC power links. Each hybrid switch power module includes a first semiconductor switch connected in parallel with a second semiconductor switch, wherein the first semiconductor switch has performance characteristics that differ from the second semiconductor switch. The gate drive circuit includes a gate driver, a first variable resistance circuit, and a second variable resistance circuit. The gate controller is connected to the gate drive circuit via a plurality of links. The gate controller generates control signals that are communicated to the gate drive circuit to control the hybrid switch power module via the links.