Hybrid IPD Submount Layout for RF Transistor Space Constraints
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Solution Overview
Problem
Existing integrated passive device (IPD) components mounted on PCB or Si-based substrates face limitations such as restricted component count, increased manufacturing complexity and cost, and inefficient space utilization, which hampers their functionality in RF power amplifier transistor products.
Innovation Solution
A transistor device is designed with a metal submount, a transistor die, a first IPD component with a PCB substrate, and a second IPD component with a SiC substrate, where the substrates are of different materials, allowing for increased component count, functionality, and efficient space utilization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If IPD components are mounted on PCB or Si-based substrates, then the components can be implemented with standard mounting processes, but the component count is limited and manufacturing complexity increases
Solution Approach 1:
The patent combines multiple IPD components (capacitors, inductors, resistors) onto a single hybrid substrate that integrates both PCB and SiC material regions. This merging approach increases the component count that can be implemented while reducing manufacturing complexity by consolidating what would otherwise require multiple separate mounting operations.
Solution Approach 2:
The hybrid substrate serves multiple functions simultaneously: it provides both PCB-based regions for certain components and SiC-based regions for other components, acting as a universal mounting platform that accommodates different component types and material requirements in a single structure.
2Quantity of substance
If multiple IPD components are implemented on separate substrates, then each component can be optimized for its specific substrate, but the manufacturing cost and complexity increase
Solution Approach 1:
The patent merges multiple IPD components onto a single hybrid substrate structure, reducing the total number of separate substrate assemblies required. This consolidation decreases manufacturing cost by reducing the number of assembly operations, interconnectors, and testing steps needed compared to implementing each component on a separate substrate.
3Adaptability or versatility
If traditional IPD components are used, then the manufacturing process is straightforward, but the components consume substantial area and limit functionality
Solution Approach 1:
The hybrid substrate applies local quality by having different material regions (PCB and SiC) in different areas of the same substrate. This allows certain components to be placed on PCB regions while others are placed on SiC regions, optimizing each component's performance characteristics while maintaining compact overall dimensions and enabling higher functionality within limited space.
Data Source
AI summary
A transistor device includes a metal submount; a transistor die arranged on said metal submount; a first integrated passive device (IPD) component that includes a first substrate arranged on said metal submount; and a second integrated passive device (IPD) component that includes a second substrate arranged on the metal submount. Additionally, the first substrate is a different material from the second substrate.