Hybrid Memory Subsystem with Backup Power Capacitor

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Solution Overview

Problem

Traditional nonvolatile memory systems, such as NAND flash devices, face issues with slow access speeds and premature failure due to frequent write cycles, leading to unreliable operation and increased lifecycle costs in applications requiring fast metadata access and storage.

Innovation Solution

A hybrid memory subsystem combining SDRAM as volatile memory with NAND FLASH as nonvolatile memory, utilizing an analog power control circuitry and backup power capacitors to isolate and backup data during power failures, reducing write cycles on the nonvolatile memory and extending its lifespan.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If NAND flash devices are used to store frequently accessed data, then nonvolatile storage is achieved, but access speed becomes slow and the devices wear out prematurely due to frequent write cycles

Engineering Contradiction:
Improvememory reliabilityVSAvoidaccess speed
Core Design Contradiction:
ReliabilityVSSpeed

Solution Approach 1:

The memory system is segmented into two distinct parts: volatile SDRAM for fast frequent writes and nonvolatile NAND flash for persistent storage. This segmentation allows each memory type to operate in its optimal performance zone, with the controller intelligently directing write operations to SDRAM and trigger-based saves to NAND flash, thereby resolving the contradiction between speed and reliability

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

A memory controller acts as an intermediary between the volatile SDRAM and nonvolatile NAND flash devices. This controller manages data flow, monitors write frequencies, and triggers selective saves to NAND flash only when necessary (e.g., on power failure detection), reducing unnecessary write cycles while maintaining data integrity and access speed

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If NAND flash devices are used for frequent metadata operations, then nonvolatile storage is achieved, but the devices fail prematurely due to limited erase/write capabilities

Engineering Contradiction:
Improvesystem operation reliabilityVSAvoidmemory lifespan
Core Design Contradiction:
ReliabilityVSDuration of action of stationary object

Solution Approach 1:

The system uses volatile SDRAM as a disposable buffer for frequent write operations. Data can be written to SDRAM repeatedly without degradation, and only critical data is selectively saved to the more durable but slower NAND flash. This approach extends the lifespan of NAND flash by minimizing its usage to essential persistence operations only

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

Solution Approach 2:

The system performs preliminary writes to volatile SDRAM before transferring data to nonvolatile NAND flash. This preliminary action in the volatile memory absorbs the wear from frequent writes, while the nonvolatile memory only undergoes write operations when data needs to be persisted, thereby extending its operational lifespan

Inventive Principle:
Principle #10Preliminary action

3Reliability

If traditional nonvolatile memory is used for fast access, then nonvolatile storage is achieved, but access speed remains slow due to block-sequential access methods

Engineering Contradiction:
Improvedata persistenceVSAvoiddata access efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The system segments memory operations into two categories: frequent random access operations handled by volatile SDRAM for high productivity, and less frequent persistence operations handled by nonvolatile NAND flash for data reliability. This segmentation allows the system to achieve both fast access and reliable storage without compromise

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The hybrid memory subsystem provides a low-cost, high-density, non-volatile memory solution that extends the useful lifetime of nonvolatile memory by minimizing write cycles and ensuring data persistence during power failures, while maintaining fast access speeds and reliability.

Implementation Method 1

analog power control circuitry to determine whether a backup power capacitor has sufficient power to backup a portion or all of the volatile memory to the nonvolatile memory

Methodology Applied
Scientific EffectCapacitance: Capacitance

Implementation Method 2

analog power control circuitry to determine whether a backup power capacitor has sufficient power to backup a portion or all of the volatile memory to the nonvolatile memory in the event that external system power fails

Methodology Applied
Scientific EffectPower detection:

Data Source

PatentUS8200885B2Hybrid memory system with backup power source and multiple backup an restore methodology
Publication Date: 2012.06.12 CYPRESS SEMICONDUCTOR CORP
  • US8200885B2 patent drawing
  • US8200885B2 patent drawing
  • US8200885B2 patent drawing

AI summary

A memory subsystem includes a volatile memory and a nonvolatile memory. A controller includes logic to interface the volatile memory to an external system, so that the volatile memory is addressable for reading and writing by the external system. The controller includes logic to back up data from the volatile memory to the nonvolatile memory upon receiving a backup signal from the external system. A power controller includes logic to detect when power from the external system fails, and when power from the external system fails, to provide backup power for long enough to enable the controller to back up data from the volatile memory to a first region of the nonvolatile memory. The controller, upon receiving the backup signal from the external system, backs up data from the volatile memory to a second region of the nonvolatile memory different that the first region used to back up data from the volatile memory to the nonvolatile memory when power from the external system fails.