Hybrid Memory Controller Segmentation for DRAM and SCM Access

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Solution Overview

Problem

Hybrid memory systems face limitations in high-speed memory access and power consumption due to the use of a single memory channel for data transfer between DRAM and SCM, which restricts access speed and increases power consumption due to stray capacitance in wiring.

Innovation Solution

A multi-channel memory chip with a cross-bar switch and a memory controller that provides separate channels for DRAM and SCM, allowing for independent data transfer and timing training to optimize data access and reduce power consumption by minimizing wiring length.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If a single memory channel is used for data transfer between DRAM and SCM, then device complexity is reduced, but memory access speed deteriorates and power consumption increases

Engineering Contradiction:
Improvememory access speedVSAvoidmemory channel structure
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

The memory channel is segmented into multiple independent channels (first memory channel for DRAM, second memory channel for SCM). Each channel operates independently to transfer data between the memory controller and respective memory devices, enabling parallel access and improving overall memory access speed without requiring a completely complex new architecture.

Inventive Principle:
Principle #1Segmentation

2Use of energy by moving object

If a single memory channel is used for data transfer between DRAM and SCM, then wiring length is reduced, but power consumption increases due to stray capacitance

Engineering Contradiction:
Improvepower consumptionVSAvoidmemory access speed
Core Design Contradiction:
Use of energy by moving objectVSSpeed

Solution Approach 1:

The power consumption issue is addressed by segmenting the memory interface into separate channels for DRAM and SCM. Each channel has its own dedicated wiring and control logic, which reduces the overall stray capacitance compared to a single high-speed channel serving both memory types. This segmentation allows for optimized power management while maintaining high access speeds.

Inventive Principle:
Principle #1Segmentation

3Ease of operation

If the same memory channel is used for both DRAM and SCM, then ease of operation is improved, but access speed to each memory device deteriorates

Engineering Contradiction:
Improvememory controller operationVSAvoidaccess speed to each memory device
Core Design Contradiction:
Ease of operationVSSpeed

Solution Approach 1:

The memory controller is divided into separate control units for each memory channel - a first control unit for DRAM operations and a second control unit for SCM operations. Each control unit is optimized for its specific memory type, maintaining ease of operation through specialized control logic while enabling simultaneous high-speed access to both DRAM and SCM devices through parallel channels.

Inventive Principle:
Principle #1Segmentation

4Productivity

If separate channels are provided for DRAM and SCM, then memory access speed is improved, but device complexity increases

Engineering Contradiction:
Improvedata transfer efficiencyVSAvoidmemory channel architecture
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The memory system is segmented into distinct channels with dedicated control units, cross-bar switches, and timing training mechanisms for each memory type. This segmentation enables parallel data transfer operations between the memory controller and multiple memory devices, significantly improving productivity and data transfer efficiency while managing complexity through modular, specialized components rather than a monolithic complex system.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS11449258B2Apparatuses and methods for accessing hybrid memory system
Publication Date: 2022.09.20 MICRON TECHNOLOGY INC
  • US11449258B2 patent drawing
  • US11449258B2 patent drawing
  • US11449258B2 patent drawing

AI summary

Apparatuses and methods for controlling word lines and sense amplifiers in a semiconductor device are described. An example apparatus includes: a memory array including a plurality of memory cells; a memory controller that transmits a command signal, address signals and further provides and receives data signals; a first port including: a first command terminal that receives the first command signal from the memory controller, first address terminals that receive first address signals from the memory controller, and first data terminals that receive first data signals from the memory controller and further transmit first data signals to the memory controller; and a second port including: a second command terminal that receives a second command signal from the memory controller; second address terminals that receive second address signals from the memory controller and second data terminals that receive second data signals from an external apparatus other than the memory controller and further transmit second data signals to the external apparatus.