Hybrid Memory Module Thermal Layout for Flash Life

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Current memory modules, particularly in servers handling big data, face throughput bottlenecks due to the lower performance of PCI-SSDs compared to DRAMs, and flash memories' shorter service life when exposed to high temperatures, which are not adequately addressed by existing technologies.

Innovation Solution

A memory module design featuring a double-sided substrate with strategically arranged memory controllers, DRAMs, and flash memories, where flash memories are positioned closer to the back surface to minimize heat exposure from CPU heat sources, and heat-dissipating components are optimized to maintain ambient temperatures within a safe range, enhancing packaging density and performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If flash memories are densely packed to increase packaging density, then storage capacity is improved, but ambient temperature increases causing shorter service life

Engineering Contradiction:
Improvepackaging density of flash memoriesVSAvoidservice life of flash memories
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent applies local quality by creating distinct thermal zones within the memory module. Flash memories are positioned in regions with better heat dissipation conditions (away from the CPU heat source), while other components are arranged in different thermal zones. This spatial differentiation of thermal environments allows high-density packing while protecting flash memories from excessive heat, thus maintaining both packaging density and service life.

Inventive Principle:
Principle #3Local quality

2Area of stationary object

If flash memories are positioned closer to CPU heat sources to reduce space, then packaging density is improved, but temperature increases reducing service life

Engineering Contradiction:
Improvespace utilization in memory moduleVSAvoidambient temperature of flash memories
Core Design Contradiction:
Area of stationary objectVSTemperature

Solution Approach 1:

The patent resolves the space-temperature contradiction by utilizing the vertical dimension (substrate layers) rather than only horizontal arrangement. Flash memories are mounted on the substrate at positions that are closer to the first edge (socket terminal side) rather than directly under the CPU, and the substrate's multi-layer structure provides thermal management pathways. This three-dimensional spatial arrangement optimizes both space utilization and thermal conditions.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Speed

If DRAMs are used to provide high throughput, then CPU memory bus throughput is improved, but storage capacity is limited compared to flash memories

Engineering Contradiction:
Improvesignal transmission rateVSAvoidstorage capacity
Core Design Contradiction:
SpeedVSQuantity of substance

Solution Approach 1:

The patent merges different types of memory technologies (DRAM and flash memory) into a single hybrid memory module. DRAMs provide high-speed buffer storage for frequently accessed data, while flash memories provide high-capacity storage for larger datasets. This combination allows the system to achieve both high throughput for critical operations and high storage capacity for overall data handling, resolving the trade-off between speed and capacity.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS9858181B2Memory module having different types of memory mounted together thereon, and information processing device having memory module mounted therein
Publication Date: 2018.01.02 HITACHI VANTARA LTD
  • US9858181B2 patent drawing
  • US9858181B2 patent drawing
  • US9858181B2 patent drawing

AI summary

A memory module having different types of memory mounted together on a double-sided substrate has a first edge and opposite second edge and includes a plurality of memory controllers, a plurality of flash memories, and a plurality of second memories having a higher signal transmission rate than the flash memories. A socket terminal for connecting the double-sided substrate to a motherboard is formed on the front surface and the back surface of the double-sided substrate on the first edge side; the memory controllers are disposed on the second edge side; the second memories are disposed on the second edge side at positions opposite the positions at which the memory controllers are disposed; and the flash memories are disposed on at least the back surface thereof at positions that are closer to the first edge than are the positions at which the memory controllers and the second memories are disposed.