Hybrid Three-Phase Motor Driver Layout for Lower MOSFET RDSON

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Solution Overview

Problem

Conventional three-phase motor drivers face challenges with increased drain-source on resistance (RDSON) due to longer wires connecting external MOSFETs to the driver IC, which is exacerbated by higher voltage applications, and monolithic ICs are limited in driving capability for high voltage devices.

Innovation Solution

A hybrid integrated circuit (IC) design that integrates discrete high-side and low-side MOSFETs within a single package, reducing wiring and allowing for higher voltage applications by arranging MOSFETs to minimize wire length and using bonding wires for efficient connectivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If external MOSFETs are connected to driver IC using wires, then the driver IC can control the MOSFETs, but the wire length increases drain-source on resistance (RDSON)

Engineering Contradiction:
ImproveRDSONVSAvoidwire length
Core Design Contradiction:
ReliabilityVSLength of stationary object

Solution Approach 1:

The patent combines the driver IC and MOSFETs into a single integrated package, merging previously separate components. This integration eliminates long external wires and reduces RDSON by placing the MOSFETs in close proximity to the driver IC, while maintaining the functional separation needed for high-voltage and low-voltage signal paths.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent transitions from a planar/wire-based connection to a three-dimensional integrated structure. By stacking or arranging the driver IC and MOSFETs in vertical or close-proximity spatial relationships within the package, the design reduces effective wire length and impedance while maintaining electrical functionality.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Device complexity

If monolithic IC design is used, then integration is high, but driving capability for high voltage devices is limited

Engineering Contradiction:
Improveintegration levelVSAvoidhigh voltage driving capability
Core Design Contradiction:
Device complexityVSPower

Solution Approach 1:

The patent segments the integrated circuit into distinct functional modules: a driver IC for low-voltage control signals and separate MOSFETs for high-voltage power switching. This segmentation allows each module to be optimized for its specific voltage domain while being packaged together, achieving both integration and high-voltage capability.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent creates a composite hybrid IC structure that combines different types of semiconductor components (driver IC and power MOSFETs) with different voltage ratings. This composite approach enables the system to handle both low-voltage control signals and high-voltage power delivery within a single integrated package.

Inventive Principle:
Principle #40Composite materials

3Ease of manufacture

If MOSFETs are placed far from driver IC, then layout flexibility is high, but wire length and impedance increase

Engineering Contradiction:
Improvelayout flexibilityVSAvoidwire length
Core Design Contradiction:
Ease of manufactureVSLength of stationary object

Solution Approach 1:

The patent employs flexible bonding wire routing and adjustable MOSFET placement positions within the integrated package. The layout allows optimization of wire lengths for each specific application while maintaining manufacturing flexibility, enabling designers to balance between minimal wire length and ease of assembly based on specific performance requirements.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS12532765B2Three-phase motor driver with built-in discrete MOSFETs
Publication Date: 2026.01.20 RENESAS ELECTRONICS AMERICA INC
  • US12532765B2 patent drawing
  • US12532765B2 patent drawing
  • US12532765B2 patent drawing

AI summary

Circuits and devices for a motor driver are described. A hybrid integrated circuit (IC) can include a driver IC, a first IC, and a plurality of second ICs. The first IC can include a plurality of high-side metal-oxide-semiconductor field-effect transistors (MOSFETs). The first IC can further include a common drain terminal connected to drains of the plurality of high-side MOSFETs. Each one of the plurality of second ICs can include a respective low-side MOSFET. The hybrid IC can further include a first set of bonding wires connecting the driver IC to the first IC. The hybrid IC can further include a second set of bonding wires connecting the driver IC to the plurality of second ICs. The hybrid IC can further include a third set of bonding wires connecting the first IC to the plurality of second ICs.