Hybrid OPC Pattern Characterization for IC Layout Correction
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Solution Overview
Problem
The semiconductor manufacturing industry faces challenges in accurately transferring IC design layouts to silicon wafers due to distortions in the near- and sub-wavelength lithography regime, where rule-based OPC is not very accurate and requires complex manual rule determination, while model-based OPC is more accurate but complex and time-consuming.
Innovation Solution
A system and method for model-based pattern characterization and rule generation that identifies which portions of an IC layout require rule-based or model-based OPC, using a lithography model to simulate patterns and determine correction rules based on performance metrics, thereby simplifying the hybrid OPC process and improving accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If rule-based OPC is used, then the process is simpler and faster, but the accuracy is not very good
Solution Approach 1:
The patent introduces a hybrid OPC system that acts as an intermediary between rule-based and model-based OPC. The system uses pattern recognition to identify specific geometric patterns and applies rule-based OPC only to those patterns for which correction rules exist, while other patterns are handled by model-based OPC. This intermediary approach selectively combines the speed of rule-based OPC with the accuracy of model-based OPC, resolving the contradiction between processing speed and accuracy.
2Manufacturing precision
If model-based OPC is used, then the accuracy is improved, but the process becomes more complex and time-consuming
Solution Approach 1:
The patent segments the IC layout into different pattern types using pattern recognition. By dividing the layout into recognizable geometric patterns, the system can apply rule-based OPC to segments with known correction rules and reserve model-based OPC for complex patterns. This segmentation reduces the overall complexity and processing time while maintaining accuracy for critical patterns.
Solution Approach 2:
The patent applies different quality levels of OPC to different regions of the layout. Rule-based OPC with predefined correction rules is applied to standard, well-understood patterns where high accuracy is not critical. Model-based OPC is reserved for complex or critical patterns requiring higher accuracy. This local differentiation of OPC quality reduces overall process complexity while maintaining necessary accuracy.
3Ease of manufacture
If manual rule determination is used, then the process is simpler to implement, but it requires complex manual effort and is not very accurate
Solution Approach 1:
The patent implements a system where the OPC tool automatically generates correction rules through pattern recognition and analysis. Instead of requiring manual determination of correction rules by operators, the system autonomously identifies patterns, analyzes their characteristics, and generates appropriate correction rules. This self-service approach eliminates manual effort while improving accuracy through systematic analysis, resolving the contradiction between ease of implementation and correction accuracy.
Data Source
AI summary
A system and method are provided for analyzing layout patterns via simulation using a lithography model to characterize the patterns and generate rules to be used in rule-based optical proximity correction (OPC). The system and method analyze a series of layout patterns conforming to a set of design rules by simulation using a lithography model to obtain a partition of the pattern spaces into one portion that requires only rule-based OPC and another portion that requires model-based OPC. A corresponding hybrid OPC system and method are also introduced that utilize the generated rules to correct an integrated circuit (IC) design layout which reduces the OPC output complexity and improves turnaround time.