Hybrid Interconnection Package Structure for Dense Chip Bonding
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Solution Overview
Problem
Existing semiconductor packaging technologies face challenges in manufacturing efficiency and reliability, particularly in creating smaller, more densely integrated package structures that require advanced bonding and interconnection methods to enhance functionality and protect semiconductor devices.
Innovation Solution
A package structure is formed with a substrate that includes conductive structures and insulating layers, where chip structures are bonded through dielectric-to-dielectric and metal-to-metal bonding, and encapsulated with protective and encapsulant layers, utilizing conductive bumps and under bump metallization for enhanced connectivity and protection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If smaller package structures are developed to take up less space, then area occupied is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent implements nested packaging by placing one package structure inside another package structure, allowing multiple semiconductor devices to be housed in a compact nested arrangement that reduces overall footprint while maintaining manageable manufacturing complexity through modular assembly
Solution Approach 2:
The patent transitions from planar 2D packaging to three-dimensional 2.5D and 3D packaging architectures, utilizing vertical stacking and multi-layer interconnection structures to reduce area occupation while organizing complexity across multiple spatial dimensions rather than increasing it in a single plane
2Adaptability or versatility
If advanced bonding methods are used to enhance functionality, then device functionality is improved, but manufacturing difficulty increases
Solution Approach 1:
The patent divides the bonding process into distinct segments: dielectric-to-dielectric bonding for structural alignment and metal-to-metal bonding for electrical interconnection. This segmentation allows each bonding type to be optimized independently and performed by specialized equipment in a coordinated manufacturing sequence, enhancing functionality while managing complexity
Solution Approach 2:
The patent performs preliminary bonding of chip structures to the interposer substrate using dielectric-to-dielectric bonding before subsequent metal bump formation and wire bonding. This preliminary action establishes precise structural alignment and mechanical stability beforehand, enabling more complex electrical interconnections to be formed with greater ease and reliability
3Reliability
If chip structures are bonded through dielectric-to-dielectric and metal-to-metal bonding, then bonding reliability is improved, but process complexity increases
Solution Approach 1:
The patent segments the bonding process into two distinct phases: dielectric-to-dielectric bonding for structural attachment and metal-to-metal bonding for electrical interconnection. Each phase uses specialized bonding equipment and parameters optimized for that specific bonding type, achieving high reliability through targeted approaches rather than attempting a single complex bonding process
Solution Approach 2:
The interposer substrate acts as an intermediary component that receives chip structures through dielectric-to-dielectric bonding and provides a platform for subsequent metal bump formation and wire bonding. This intermediary structure decouples the bonding processes, allowing each to be optimized independently while maintaining overall system reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a reliable and efficient method for forming 3D and 2.5D packaging structures with improved yield and reduced costs, ensuring high-quality bonding and effective heat dissipation while maintaining structural integrity.
Implementation Method 1
chip structures are bonded through dielectric-to-dielectric and metal-to-metal bonding
Implementation Method 2
chip structures are bonded through dielectric-to-dielectric and metal-to-metal bonding, and encapsulated with protective and encapsulant layers
Data Source
AI summary
A package structure and a formation method are provided. The method includes providing a semiconductor substrate and bonding a first chip structure on the semiconductor substrate through metal-to-metal bonding and dielectric-to-dielectric bonding. The method also includes bonding a second chip structure over the semiconductor substrate through solder-containing bonding structures. The method further includes forming a protective layer surrounding the second chip structure. A portion of the protective layer is between the semiconductor substrate and a bottom of the second chip structure.