Hybrid Plasma Sourcelet Array for Wafer Edge Uniformity Control
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Solution Overview
Problem
Existing plasma processing tools suffer from non-uniformity in ion density and etch rate profiles across the wafer, due to limited two-zone inductively coupled plasma sources that lack independent uniformity control, resulting in M-shape profiles.
Innovation Solution
A plasma source array featuring a plurality of hybrid plasma sourcelets, each combining a capacitively coupled plasma source and an inductively coupled plasma source, arranged in a multi-zone design for improved uniformity and tunability, scalable for various wafer sizes and applications.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a two-zone inductively coupled plasma source is used, then plasma generation is achieved, but uniformity control is limited resulting in M-shape profiles
Solution Approach 1:
The plasma source is divided into multiple independent sourcelets arranged in an array, where each sourcelet can be independently controlled. This segmentation allows precise local uniformity control across different zones of the wafer, eliminating the M-shape profile problem while maintaining manageable device complexity through modular design
Solution Approach 2:
Different zones of the plasma source are assigned different plasma generation characteristics to match the specific uniformity requirements of different wafer regions. The multi-zone design enables tailored plasma distribution, with each zone optimized for its local processing needs, thereby achieving superior overall uniformity control
2Quantity of substance
If inductively coupled plasma source is used, then high density plasma is generated, but capacitive coupling effects cause non-uniformity
Solution Approach 1:
Each sourcelet in the array is designed to minimize capacitive coupling effects through its specific geometry and configuration. By distributing plasma generation across multiple segmented sourcelets rather than a single large source, the system maintains high plasma density while reducing the capacitive coupling-induced non-uniformity that plagues conventional designs
Solution Approach 2:
The dielectric tube surrounding each sourcelet acts as an intermediary that controls and directs the plasma generation process. This dielectric barrier helps manage the capacitive coupling effects while allowing the inductive field to generate high-density plasma, effectively mediating between the two competing requirements
3Productivity
If conventional plasma sources are used, then processing is achieved, but metal contamination occurs
Solution Approach 1:
The sourcelets are designed with sacrificial dielectric tubes that can be easily replaced. These short-lived components protect the expensive metal coil structures from direct plasma contact and contamination, allowing the metal parts to remain intact and uncontaminated while the disposable dielectric elements are replaced when worn, thus maintaining processing capability without metal contamination
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves increased plasma uniformity and tunability, reducing capacitive coupling and metal contamination, while enabling precise power control and improved performance at extreme edge areas of the workpiece, suitable for semiconductor and other applications.
Implementation Method 1
an inductively coupled plasma source for generating a inductively coupled plasma disposed proximate to the outer surface of the dielectric tube
Implementation Method 2
a capacitively coupled plasma source for generating a capacitively coupled plasma disposed within the inner area of the dielectric tube
Implementation Method 3
Plasma sources (e.g., microwave, ECR, inductive coupling, etc.) are often used for plasma processing to produce high density plasma and reactive species for processing substrates
Data Source
AI summary
A plasma source array is provided. The plasma source array includes a plurality of hybrid plasma sourcelets disposed on a base plate. Each hybrid sourcelet includes a dielectric tube having an inner area and an outer surface; an inductively coupled plasma source for generating a inductively coupled plasma disposed proximate to the outer surface of the dielectric tube; a capacitively coupled plasma source for generating a capacitively coupled plasma disposed within the inner area of the dielectric tube; and a gas injection system configured to supply one or more process gases to the inner area of the dielectric tube. Plasma processing apparatuses incorporating the plasma source array and methods of use are also provided.