Hybrid Parallel Power Supply Current Ratio for Cost-EMI Balance
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Solution Overview
Problem
There is a lack of comprehensive research on the optimal current ratio for hybrid parallel inverters, which affects device costs, junction temperatures, and electromagnetic interference (EMI) noise, and existing solutions fail to meet the requirements for cost-effectiveness and high performance in hybrid parallel integrated power supplies.
Innovation Solution
An optimal current selection method is developed by analyzing various combinations of Si IGBT and SiC MOSFET devices with different current ratios, considering cost, junction temperature, efficiency, and EMI noise, and selecting an optimal ratio that balances these factors to improve the hybrid parallel integrated power supply's performance and cost-effectiveness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If Si IGBT devices are used with higher current ratio, then device cost is reduced, but junction temperature increases and efficiency decreases
Solution Approach 1:
The patent applies parameter changes by systematically varying the current ratio parameter (γ) between Si IGBT and SiC MOSFET devices to optimize system performance. By changing this key parameter, the patent identifies the optimal balance point where junction temperature and efficiency are maximized while considering device cost, thereby resolving the contradiction between cost reduction and temperature control.
2Ease of manufacture
If Si IGBT devices are used with higher current ratio, then device cost is reduced, but efficiency decreases
Solution Approach 1:
The patent uses parameter changes by adjusting the current ratio (γ) to find the optimal operating point that balances device cost with system efficiency. Through systematic parameter variation and analysis, the patent determines the specific current ratio that minimizes energy loss while considering cost constraints, resolving the contradiction between cost and efficiency.
3Temperature
If SiC MOSFET devices are used with lower current ratio, then junction temperature is reduced, but device cost increases
Solution Approach 1:
The patent applies parameter changes by varying the current ratio to optimize the trade-off between junction temperature and device cost. By systematically analyzing different current ratio values, the patent identifies the point where temperature is sufficiently controlled without incurring excessive device costs, thereby resolving this contradiction.
4Ease of manufacture
If current ratio is optimized for cost, then EMI noise increases
Solution Approach 1:
The patent uses parameter changes by adjusting the current ratio to simultaneously consider device cost and EMI noise characteristics. Through comprehensive analysis of how current ratio affects both cost and electromagnetic interference, the patent identifies an optimal value that balances economic considerations with electromagnetic compatibility requirements.
Data Source
AI summary
The present disclosure provides an optimal current selection method for a hybrid parallel integrated power supply, including the following steps: selecting multiple power device combinations with different current ratios, the combinations being formed by silicon insulated-gate bipolar transistor (Si IGBT) and silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) devices; comparing cost and junction temperatures on the Si IGBT devices and the SiC MOSFET devices under the different current ratios; comparing efficiency of a hybrid parallel integrated power supply with the different current ratios under different SiC MOSFET switching frequencies; comparing electromagnetic interference (EMI) noise of the hybrid parallel integrated power supply; selecting an optimal current ratio for the hybrid parallel integrated power supply.