Hybrid Power Domain Layout Using Isolation Dummy Gates
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Solution Overview
Problem
Semiconductor devices with cells of different voltages face challenges in increasing routing costs and deteriorating power consumption due to the integration of high and low voltage cells.
Innovation Solution
The use of isolation dummy gates to electrically isolate active regions in semiconductor devices, allowing for the adjustment of active region lengths in P-type and N-type FETs, thereby improving performance and reducing power consumption by implementing a hybrid power domain with different voltage levels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If high voltage cells are integrated to enable high performance computing, then computing performance is improved, but power consumption increases
Solution Approach 1:
The semiconductor device is divided into multiple power domains with different voltage levels. High voltage cells are segmented into specific regions where high performance is needed, while low voltage cells are placed in regions where power saving is prioritized. This segmentation allows the device to achieve high computing performance in critical areas without increasing overall power consumption across the entire device.
2Use of energy by moving object
If low voltage cells are used to reduce power consumption, then power efficiency is improved, but computing performance deteriorates
Solution Approach 1:
Different regions of the semiconductor device are assigned different voltage characteristics based on local performance requirements. High voltage cells provide high performance in computationally intensive regions, while low voltage cells provide power efficiency in less demanding regions. This local quality differentiation ensures that power consumption is reduced overall while computing performance is maintained where needed.
3Adaptability or versatility
If both high and low voltage cells are integrated in the same device, then adaptability to different power requirements is improved, but routing complexity and costs increase
Solution Approach 1:
Multiple power domains with different voltage levels are merged into a unified semiconductor device structure. The routing infrastructure is designed to accommodate both high voltage and low voltage cells simultaneously, with shared power distribution networks and integrated control mechanisms. This merging approach maintains adaptability to different power requirements while reducing overall routing complexity compared to separate devices.
Data Source
AI summary
A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device comprises a first electrical conductor, a second electrical conductor, a third electrical conductor, a plurality of metal features and a plurality of active regions. The first electrical conductor extends along a first direction and is electrically coupled to a first voltage. The second electrical conductor extends along the first direction and is electrically coupled to a second voltage. The second voltage is lower than the first voltage. The third electrical conductor extending along the first direction is electrically coupled to a third voltage and disposed between the first electrical conductor and the second electrical conductor. The metal features extend along a second direction perpendicular to the first direction and are formed above the first electrical conductor, the second electrical conductor and the third electrical conductor.