Hybrid Row Height IC Layout for Redundant Gate Oxide Protection
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Solution Overview
Problem
The gate oxide breakdown in integrated circuits significantly affects performance and reliability, particularly due to time-dependent dielectric breakdown, leading to increased failure rates and inefficiencies.
Innovation Solution
A mixed cell row height architecture (MCRHA) is implemented, where shadow logic circuits are placed in reduced height cell rows, with redundant transistors in parallel to main logic circuits to maintain functionality upon transistor failure, reducing area overhead and pin cap while enhancing reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If redundant transistors are added in parallel to main logic circuits, then reliability is improved, but device complexity increases
Solution Approach 1:
The circuit is segmented into main logic circuits and shadow logic circuits, with each segment containing transistors that can operate independently. This segmentation allows the shadow logic to take over when main logic fails, improving reliability without requiring complete redundancy of the entire circuit.
Solution Approach 2:
Shadow logic circuits are created as simplified copies of main logic circuits, using duplicate transistors in parallel configurations. These copies provide backup functionality while occupying less space than full redundant circuits, thus improving reliability with controlled complexity increase.
2Area of stationary object
If shadow logic circuits are placed in reduced height cell rows, then area overhead is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The shadow logic circuits are placed in a reduced height dimension within the cell row structure, utilizing vertical space optimization. This dimensional approach allows compact arrangement of shadow logic transistors below or adjacent to main logic, reducing overall area while maintaining manufacturing feasibility through standardized process layers.
3Area of stationary object
If mixed cell row height architecture is implemented, then area overhead is reduced, but device complexity increases
Solution Approach 1:
Different cell row heights are assigned to different functional regions: full-height rows for main logic circuits requiring complete transistor structures, and reduced-height rows for shadow logic circuits using simplified transistor configurations. This local differentiation optimizes area usage while maintaining necessary functionality in each region.
Solution Approach 2:
The architecture dynamically adapts transistor structures based on functional requirements, using full transistors in main logic rows and reduced transistors in shadow logic rows. This dynamic structural variation allows the same physical space to serve different computational purposes with appropriate complexity levels.
Data Source
AI summary
An integrated circuit is provided and includes first transistors of a first circuit arranged in a first cell row having a first number of fin structures and a second transistor of a second circuit. The second transistor is coupled in parallel with a first element in the first transistors between first and second terminals of the first circuit, and arranged in a second cell row having a second number, different from the first number, of fin structures. The first element and the second transistor share a first gate extending in a first direction to pass through the first and second cell rows in a layout view. The second transistor is a duplication of the first element.