Hybrid RPS CCP Plasma Source for Semiconductor Processing
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Solution Overview
Problem
Conventional plasma processing chamber designs with capacitive coupling can cause unwanted particle contamination on substrate surfaces due to ion bombardment, leading to reduced process yield and film deposition rates.
Innovation Solution
A hybrid plasma processing system combining a primary plasma source, such as capacitively coupled plasma (CCP) or inductively coupled plasma (ICP), with a secondary remote plasma source (RPS), which reduces ion bombardment by sharing or relieving the power load, thereby minimizing particle contamination and allowing lower temperature deposition with higher process yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high RF input power (over 550 W) is used to generate plasma, then film deposition rate is improved, but particle contamination on substrate surface increases due to ion bombardment
Solution Approach 1:
A remote plasma source (RPS) is introduced as an intermediary component that generates plasma in a separate region and transports reactive species to the substrate processing chamber. This mediator approach allows plasma generation away from the substrate, preventing direct ion bombardment while still delivering reactive species for deposition, thus resolving the contradiction between high deposition rate and low contamination.
Solution Approach 2:
The plasma generation function is segmented into a separate remote plasma source unit, distinct from the substrate processing chamber. This segmentation allows the plasma to be generated in one location and the reactive species to be transported to another location, separating the harmful ion bombardment effect from the useful deposition effect.
2Object-generated harmful factors
If lower RF input power is used to reduce particle contamination, then ion bombardment is reduced, but film deposition rate decreases
Solution Approach 1:
The remote plasma source acts as a mediator that enables low-power plasma generation while still providing sufficient reactive species flux to the substrate. The RPS generates plasma at lower power conditions and transports the reactive species to the substrate chamber, maintaining deposition rate without requiring high power that would cause contamination.
Solution Approach 2:
The system changes the operating parameters by using a remote plasma source that operates at different power levels and species densities compared to direct plasma sources. This parameter change allows operation in a regime where reactive species are abundant but ion bombardment is minimized, resolving the contradiction between contamination reduction and deposition rate.
3Power
If high power is applied to the primary plasma source, then plasma generation efficiency is improved, but ion bombardment of the powered electrode increases causing coating flaking
Solution Approach 1:
The remote plasma source serves as an intermediary that takes over the plasma generation function, allowing the primary plasma source to operate at reduced power. The RPS generates plasma and transports reactive species to the substrate chamber, preventing ion bombardment of the primary plasma source electrodes while maintaining efficient plasma generation through the intermediary RPS unit.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hybrid system effectively reduces particle contamination on substrate surfaces while maintaining high process yield by shifting the power burden from the primary plasma source to the secondary RPS, allowing for lower power operation and reduced ion bombardment.
Implementation Method 1
a remote plasma source (RPS) unit coupled to the at least one primary plasma source unit, wherein the one or more through holes of the lid are configured to fluidly connect a gas outlet of the RPS unit to the plasma excitation region
Implementation Method 2
a primary plasma source unit, comprising a lid having one or more through holes, and an ion suppression element, wherein the lid and the ion suppression element define a plasma excitation region
Implementation Method 3
a gas distribution plate disposed between the ion suppression element and a substrate support, wherein the gas distribution plate and the substrate support defines a substrate processing region
Data Source
AI summary
Embodiments of the disclosure generally relate to a hybrid plasma processing system incorporating a remote plasma source (RPS) unit with a capacitively coupled plasma (CCP) unit for substrate processing. In one embodiment, the hybrid plasma processing system includes a CCP unit, comprising a lid having one or more through holes, and an ion suppression element, wherein the lid and the ion suppression element define a plasma excitation region, a RPS unit coupled to the CCP unit, and a gas distribution plate disposed between the ion suppression element and a substrate support, wherein the gas distribution plate and the substrate support defines a substrate processing region. In cases where process requires higher power, both CCP and RPS units may be used to generate plasma excited species so that some power burden is shifted from the CCP unit to the RPS unit, which allows the CCP unit to operate at lower power.