Hybrid Semiconductor Package Bonding Wire Material Selection

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Solution Overview

Problem

High-temperature RF Joule heating poses challenges for bonding wires in semiconductor packages, with gold being expensive and copper prone to oxidation, while aluminum has reduced conductivity and thermal performance.

Innovation Solution

The use of gold bonding wires or ribbons for high-temperature applications and copper or aluminum for lower temperature components within the same semiconductor package, with gold accommodating greater RF Joule heating and copper or aluminum providing reliable, cost-effective performance at lower temperatures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If gold bonding wires are used for high-temperature RF applications, then temperature resistance is improved, but manufacturing cost increases

Engineering Contradiction:
Improvemaximum operating temperatureVSAvoidmanufacturing cost
Core Design Contradiction:
TemperatureVSEase of manufacture

Solution Approach 1:

The patent applies different materials to different bonding wires based on their specific thermal environments. Gold bonding wires are used specifically for tuning wires that experience high RF Joule heating (above 150°C), while copper or aluminum bonding wires are used for input/output connection wires that operate at lower temperatures. This localized material selection optimizes both temperature resistance and manufacturing cost by applying expensive gold only where thermally necessary.

Inventive Principle:
Principle #3Local quality

2Ease of manufacture

If copper bonding wires are used for cost reduction, then manufacturing cost decreases, but oxidation resistance worsens at high temperatures

Engineering Contradiction:
Improvemanufacturing costVSAvoidoxidation resistance
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent assigns copper or aluminum bonding wires to positions where they will not be subjected to high temperatures that would cause oxidation. Specifically, copper/aluminum wires are used for input and output connection wires that carry lower currents and operate below critical oxidation temperatures, while gold wires are reserved for tuning wires that experience high RF Joule heating. This spatial differentiation of material properties ensures both cost-effectiveness and reliability.

Inventive Principle:
Principle #3Local quality

3Reliability

If aluminum bonding wires are used to avoid oxidation, then oxidation resistance is improved, but electrical conductivity and thermal conductivity decrease

Engineering Contradiction:
Improveoxidation resistanceVSAvoidelectrical conductivity
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent utilizes aluminum bonding wires specifically for applications where oxidation resistance is needed but high electrical and thermal conductivity is not critical. Aluminum wires are employed for certain input/output connections where the current load and thermal generation are lower. For positions requiring high conductivity (tuning wires with high RF currents), gold or copper wires are selected instead, creating an optimized material distribution across the package.

Inventive Principle:
Principle #3Local quality

4Temperature

If the number of bonding wires is increased to reduce heating, then temperature resistance is improved, but device complexity increases

Engineering Contradiction:
Improvebonding wire temperatureVSAvoidnumber of bonding wires
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The patent changes the material parameter (from uniform copper/aluminum to selective gold usage) rather than changing the quantity parameter (number of wires). By using gold bonding wires for tuning wires, the patent achieves better temperature resistance without increasing the number of bonding wires. This material substitution approach reduces heating effects in critical paths while maintaining device complexity at acceptable levels.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration allows for reliable operation of semiconductor packages at high temperatures without oxidation, ensuring extended device lifetime and reduced costs by utilizing gold for high-temperature components and less expensive materials for lower temperature ones.

Implementation Method 1

the temperature of the tuning wires often exceeds about 150° C. to 160° C., and even 200° C. in certain applications, due to RF Joule heating, i.e., ohmic heating and resistive heating whereby the tuning wires release heat as a result of electric current passing through the wires at RF frequencies

Methodology Applied
Scientific EffectRF Joule heating: Joule Heating

Implementation Method 2

Aluminum bonding wires are less sensitive to the temperature issues described above as compared to copper bonding wires, and have a self-passivating oxide layer that limits further oxidation

Methodology Applied
Scientific EffectSelf-passivating oxide layer formation: Oxidation

Data Source

PatentUS9373577B2Hybrid semiconductor package
Publication Date: 2016.06.21 MACOM TECH SOLUTIONS HLDG INC
  • US9373577B2 patent drawing
  • US9373577B2 patent drawing
  • US9373577B2 patent drawing

AI summary

A semiconductor package includes a substrate, an RF semiconductor die attached to a first side of the substrate, a capacitor attached to the first side of the substrate, and a first terminal on the first side of the substrate. The semiconductor package further includes copper or aluminum bonding wires or ribbons connecting the first terminal to an output of the RF semiconductor die, and gold bonding wires or ribbons connecting the capacitor to the output of the RF semiconductor die. The gold bonding wires or ribbons are designed to accommodate greater RF Joule heating during operation of the RF semiconductor die than the copper or aluminum bonding wires or ribbons. Corresponding methods of manufacturing are also described.